Plasma processing chamber, potential controlling apparatus, method, program and storage medium

Abstract

The invention relates to a plasma processing chamber (10) which comprises a covered container (11), cylinder side wall component (45) inside the container, an electric potential control device (46) with conducting component (47) which can be contacted with the side wall component (45), or not be contacted with the side wall component (45) and be grounded via up and down. During the RIE process, the conducting component (47) is contacted with the side wall component (45) via lowering down, setting the electric potential of the side wall component (45) as grounding potential; during the ashing process, the conducting component (47) is not contacted with the side wall component (45) via rising up, setting the electric potential of the side wall component (45) as suspension joint electric potential.

Description

technical field [0001] The present invention relates to a plasma processing chamber, a potential control device, a potential control method, a program, and a storage medium, and particularly to a plasma processing chamber having components exposed to plasma. Background technique [0002] Conventionally, a plasma processing chamber including a cylindrical container and an electrode arranged in the container and connected to a high-frequency power source is known. In this plasma processing chamber, a processing gas is introduced into a container, and high-frequency power is applied to electrodes in a space in the container. Furthermore, when a semiconductor wafer serving as a substrate is housed in a container, the introduced processing gas is turned into plasma by high-frequency power to generate ions, and the semiconductor wafer is subjected to plasma processing, such as etching processing, by the ions. [0003] In the above-mentioned plasma processing chamber, when the rea...

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Problems solved by technology

[0008] However, in the processing chamber of Patent Document 1, in addition to the high-frequency power supply for the electrodes, a high-frequency power supply for the side walls is also required, that is, a high-frequency power supply for the components of the processing chamber other than the electrodes, so the processing chamber The composition of the problem becomes complicated

[0009] In addition, in the processing chamber of Patent Document 1, when the operating time reaches a predetermined value, only the polymer on the side wall is removed by connecting the side wall to the high-frequency power supply, so it is difficult to control the amount of polymer adhesion. As a result, in a plasma In the processing chamber, when repeating the above deposition process and using O 2 Gas is used as a processing gas, no neutral active radicals are generated, no polymer is attached to the side wall, and no deposition is attached to the surface of the semiconductor wafer. If the polymer on the side wall is to be completely removed, there will also be Possibility that positive ions collide directly with the side wall without polymer, and consume the side wall, and as a result, the working efficiency of the plasma processing chamber decreases.

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