Method for preparing electric ferroelectric thick film by liquid phase epitaxy
A ferroelectric thick film, liquid phase epitaxy technology, applied in liquid phase epitaxy layer growth, chemical instruments and methods, circuits, etc., to achieve the effect of simple process and optimized performance
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Embodiment 1
[0017] 1. According to the stoichiometric ratio of 0.91PbZn 1 / 3 Nb 2 / 3 O3-0.09PbTiO 3 Carry out the batching of oxide raw materials;
[0018] 2. Mill in an agate ball mill jar for 6 hours, and calcine at 900°C for 4 hours;
[0019] 3. Uniformly mix the calcined powder with 50wt% PZNT and 50wt% lead oxide, and press into tablets;
[0020] 4. Put the powder into a sealed crucible, heat up to 1150°C, and keep it warm for 10 hours;
[0021] 5. Lower the temperature to 1080°C, place a strontium titanate seed crystal substrate from the top for epitaxial growth to obtain a PZNT ferroelectric thick film material (different thicknesses of PZNT thick films can be obtained according to different growth times).
Embodiment 2
[0023] 1. According to the stoichiometric ratio of 0.93PbZn 1 / 3 Nb 2 / 3 o 3 -0.07PbTiO 3 Carry out the batching of oxide raw materials;
[0024] 2. Ball mill in an agate ball mill jar for 7 hours, and calcine at 900°C for 6 hours;
[0025] 3. Uniformly mix the calcined powder with 40wt% PZNT and 60wt% lead oxide, and press into tablets;
[0026] 4. Put the powder into a sealed crucible, heat up to 1100°C, and keep it warm for 10 hours;
[0027] 6. Lower the temperature to 1060°C, place a strontium titanate seed crystal substrate from the top for epitaxial growth to obtain a PZNT ferroelectric thick film material (PZNT thick films with different thicknesses can be obtained according to the growth time).
Embodiment 3
[0029] 1. According to the stoichiometric ratio of 0.65PbMg 1 / 3 Nb 2 / 3 o 3 -0.35PbTiO 3 Carry out the batching of oxide raw materials;
[0030] 2. Ball mill in an agate ball mill jar for 8 hours, and calcine at 900°C for 8 hours;
[0031] 3. Uniformly mix the calcined powder with 50wt% PMNT and 50wt% lead oxide, and press into tablets;
[0032] 4. Put the powder into a sealed crucible, heat up to 1180°C, and keep it warm for 20 hours;
[0033] 5. Cool down to 1100°C, put a strontium titanate seed crystal substrate from the top for epitaxial growth to obtain PMNT ferroelectric thick film material (PMNT thick film with different thickness can be obtained according to the growth time).
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