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Method for preparing electric ferroelectric thick film by liquid phase epitaxy

A technology of ferroelectric thick film and liquid phase epitaxy, which is applied in the direction of liquid phase epitaxial layer growth, chemical instruments and methods, circuits, etc., to achieve the effect of optimized performance and simple process

Inactive Publication Date: 2004-02-04
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing ferroelectric thick film material by liquid phase epitaxy for the difficulties and deficiencies in the preparation process of the existing lead-based ferroelectric single crystal, which can be realized in strontium titanate (SrTiO3 ) Epitaxial growth of PZNT and PMNT thick films on the substrate according to specific orientation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1. According to the stoichiometric ratio of 0.91PbZn 1 / 3 Nb 2 / 3 o 3 -0.09PbTiO 3 Carry out the batching of oxide raw materials;

[0018] 2. Mill in an agate ball mill jar for 6 hours, and calcine at 900°C for 4 hours;

[0019] 3. Uniformly mix the calcined powder with 50wt% PZNT and 50wt% lead oxide, and press into tablets;

[0020] 4. Put the powder into a sealed crucible, heat up to 1150°C, and keep it warm for 10 hours;

[0021] 5. Lower the temperature to 1080°C, place a strontium titanate seed crystal substrate from the top for epitaxial growth to obtain a PZNT ferroelectric thick film material (different thicknesses of PZNT thick films can be obtained according to different growth times).

Embodiment 2

[0023] 1. According to the stoichiometric ratio of 0.93PbZn 1 / 3 Nb 2 / 3 o 3 -0.07PbTiO 3 Carry out the batching of oxide raw materials;

[0024] 2. Ball mill in an agate ball mill jar for 7 hours, and calcine at 900°C for 6 hours;

[0025] 3. Uniformly mix the calcined powder with 40wt% PZNT and 60wt% lead oxide, and press into tablets;

[0026] 4. Put the powder into a sealed crucible, heat up to 1100°C, and keep it warm for 10 hours;

[0027] 6. Lower the temperature to 1060°C, place a strontium titanate seed crystal substrate from the top for epitaxial growth to obtain a PZNT ferroelectric thick film material (different thicknesses of PZNT thick films can be obtained according to different growth times).

Embodiment 3

[0029] 1. According to the stoichiometric ratio of 0.65PbMg 1 / 3 Nb 2 / 3 o 3 -0.35PbTiO 3 Carry out the batching of oxide raw materials;

[0030] 2. Ball mill in an agate ball mill jar for 8 hours, and calcine at 900°C for 8 hours;

[0031] 3. Uniformly mix the calcined powder with 50wt% PMNT and 50wt% lead oxide, and press into tablets;

[0032] 4. Put the powder into a sealed crucible, heat up to 1180°C, and keep it warm for 20 hours;

[0033] 5. Lower the temperature to 1100°C, put a strontium titanate seed crystal substrate from the top for epitaxial growth to obtain PMNT ferroelectric thick film material (PMNT thick film with different thickness can be obtained according to the growth time).

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Abstract

In the method, oxide raw material is prepared according to composition used normally in crystal growth of lead magnesate niobium-lead titanate or lead zincate niobium-lead titanate first. Then the prepared power material is put into agate mortar for ball grinding and to carry on roasting at temperature of 900 degreeC. At last, PZNT (PMNT) thick film is prepared by epitaxial growth on substrate of strontium titanate after the roasted powder material is mixed uniformly with flux of lead oxide and to soak it under high temperature for a period of time.

Description

Technical field: [0001] The present invention relates to a liquid phase epitaxy (Liquid Phase Epitaxy, referred to as LPE) method for preparing a ferroelectric thick film, which is a method of adding through the top seed crystal substrate in a high-temperature solvent, and controlling it on the seed crystal substrate according to a specific A new approach to fabricate ferroelectric thick-film materials with uniform composition, structure, and properties by epitaxial growth. Background technique: [0002] Lead-based ferroelectric materials have attracted widespread attention from scholars at home and abroad for their excellent piezoelectric and dielectric properties, and have been widely used in medical ultrasonic diagnostic equipment and naval sonar. At present, the annual output value of only B-type ultrasonic diagnostic and therapeutic instruments in the world is as high as 2 billion U.S. dollars, of which the material market is close to 200 million U.S. dollars, and lead ...

Claims

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Application Information

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IPC IPC(8): C30B19/00C30B29/22H01L21/368H01L41/41
Inventor 姚忻曾新华
Owner SHANGHAI JIAO TONG UNIV
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