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Thin film transistor and producing method thereof

A technology of thin-film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of reducing electron mobility and low leakage current

Active Publication Date: 2008-12-17
高智发明基金第82有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the known TFT 100 is not a perfect switch, when no voltage is applied to the gate 120 or a negative voltage is applied, the source 160 and the drain 170 are not completely non-conductive.

Method used

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  • Thin film transistor and producing method thereof
  • Thin film transistor and producing method thereof
  • Thin film transistor and producing method thereof

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Experimental program
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Embodiment Construction

[0040] Figure 2A to Figure 2E It is a schematic diagram of a manufacturing method of a thin film transistor according to a preferred embodiment of the present invention. Please refer to Figure 2A , The manufacturing method of the thin film transistor of this embodiment includes the following steps. Firstly, a substrate 210 is provided, such as a glass substrate or a substrate of other suitable materials. Then, the gate 220 is firstly formed on the substrate 210 , and the method of forming the gate 220 includes a thin film deposition process, a photolithography process, and an etching process.

[0041] Please refer to Figure 2B , and then, a gate insulating layer 230 is formed on the substrate 210 and the gate 220 to cover the gate 210 . A method of forming the gate insulating layer 230 includes a chemical vapor deposition method.

[0042] Please refer to Figure 2C , after the gate insulating layer 230 is completed, a channel layer 240 is formed on the gate insulating...

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Abstract

A thin film transistor includes a gate, a gate insulating layer, a channel layer, a source, a drain and an ohmic contact layer. The gate insulating layer will cover the gate; the channel layer is located on the gate insulating layer above the gate; the source and drain are arranged on the channel layer; the ohmic contact layer is arranged between the channel layer and the source and drain Between, and this ohmic contact layer is made of multi-layer N-type doped amorphous silicon layer. According to the above, the ohmic contact layer of the thin film transistor disclosed in the present invention is composed of multiple layers of N-type doped amorphous silicon layer, so the leakage current of the thin film transistor is relatively small when it is in the off state.

Description

technical field [0001] The present invention relates to a thin film transistor and a manufacturing method thereof, and more particularly to a thin film transistor and a manufacturing method thereof, which have lower current leakage in an off state. Background technique [0002] In recent years, due to the advancement of semiconductor process technology, the manufacture of thin film transistors has become easier and faster. Thin film transistors are widely used, such as computer chips, mobile phone chips or thin film transistor liquid crystal displays (thin film transistor liquid crystal display, TFT LCD). Take the thin film transistor liquid crystal display as an example, where the thin film transistor is used as a switch for charging or discharging a storage capacitor. [0003] figure 1 It is a structural sectional view of a known thin film transistor. A known thin film transistor 100 is formed on a glass substrate 110 and includes a gate 120 , an insulating layer 130 , ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
Inventor 许民庆莫云龙
Owner 高智发明基金第82有限责任公司