Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching (RIE) in the chamber 11. A focus ring 25 has P-type silicon as a parent material thereof. At least part of the focus ring 25 is exposed to an interior of the chamber 11. The focus ring 25 has been subjected to heat treatment at least once.

Description

technical field [0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to a substrate processing apparatus having constituent members having p-type silicon as a base material arranged in a processing chamber where plasma is generated. Background technique [0002] Generally, a substrate processing apparatus for performing predetermined plasma processing on a substrate such as a wafer for a semiconductor device has a processing chamber (hereinafter referred to as a "chamber") for accommodating a substrate and performing plasma processing. In this substrate processing apparatus, a processing gas is introduced into a chamber, and a high-frequency electric field is generated in the chamber to convert the processing gas into plasma to generate ions and radicals, and plasma processing is performed on a substrate using the ions and radicals. [0003] In the chamber, a focus ring made of silicon is disposed a...

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Problems solved by technology

[0006] During the plasma processing of multiple batches of substrates, if the resistivity value of the focus ring changes, the distribution of the high-frequency electric field near the substrate changes, and there is a problem that stable plasma processing cannot be performed on multiple batches of substrates.

In particular, in recent years, the processing size of wiring and electrodes in semiconductor devices manufactured with substrates has been required to be reduced. Due to the requirement for the stability of the plasma atmosphere in the chamber, the requirements for the stability of the high-frequency electric field are higher than now. So it is possible to further surface the above problem

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