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Method for preparing phase shift storage by silicon wet etching and keying process

A wet etching and bonding process technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as long process cycle, high cost, and optimized process

Active Publication Date: 2009-05-27
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there are unfavorable factors such as high cost, long process cycle, and optimized process.

Method used

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  • Method for preparing phase shift storage by silicon wet etching and keying process
  • Method for preparing phase shift storage by silicon wet etching and keying process
  • Method for preparing phase shift storage by silicon wet etching and keying process

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Embodiment 1

[0025] Embodiment 1, the fabrication process of the phase-change random access memory provided by the present invention is as follows: figure 1 shown. The specific steps are described as follows:

[0026] Step 1, clean the silicon oxide wafer, deposit 30nm TiN and 100nm Pt ( figure 2 );

[0027] Step 2, cleaning the (100) silicon wafer, and then bonding with the Pt in step (1), and then performing back thinning and polishing of the bonded (100) silicon wafer. The polishing liquid used for polishing is a self-made polishing liquid, and the composition of the polishing liquid is 5wt% silicon dioxide abrasive, 1wt% active agent is fatty alcohol polyoxyethylene ether (JFC), 0.5wt% resist benzotriazole (BTA) , PH is 11, and the balance is deionized water ( image 3 );

[0028] Step 3. Thermally oxidize SiO on the polished silicon wafer 2 , in SiO 2 Photolithographically form a pattern on the top and then etch away the SiO under the pattern 2 ( Figure 4 );

[0029] Step ...

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Abstract

This invention relates to a method for manufacturing phase transformation random storages with a low temperature bonding and silicon wet etch technology including: 1, cleaning silicon oxide plates and depositing Ti of 30nm or TiN and Pt or Au of 100nm, 2, cleaning 100 Si plates and bonding them with Pt or Au in step 1 then to thin and polish them, 3, heating the silicon plates to SiO2 to be etched to a pattern, then the SiO2 under the pattern is etched, 4, etching the (100) silicon plates with an etch solution to form a V structure, 5, dry-oxidating the shaped V, 6, depositing the phase tramsformation material and removing the material except the V structured material, 7, etching it again to deposit the top electrode. Under the condition of mum level process, the unit devices of nm phase transformation storages are realized.

Description

technical field [0001] The invention relates to a method for manufacturing a phase-change memory, in particular to a method for preparing a phase-change memory by wet etching and low-temperature bonding techniques. It belongs to the microelectronics process in microelectronics. Background technique [0002] Compared with the current dynamic random access memory (DRAM) and flash memory (FLASH), phase-change thin film material random access memory (PRAM) has obvious advantages: it is small in size, low in driving voltage, low in power consumption, fast in read and write speed, and non-volatile . Phase change memory is not only a non-volatile memory, but it is also possible to make multi-level storage, and it is suitable for ultra-low temperature and high temperature environments, and is resistant to radiation and vibration. Therefore, it will not only be widely used in daily portable electronic products, but also in aerospace There are huge potential applications in other fi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L21/00
Inventor 宋志棠刘奇斌封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI