Thin film capacitor, method for forming same, and computer readable recording medium

Abstract

In the film capacitor of the present invention, electric field concentration is suppressed to reduce leakage current. A first zirconium oxide layer (26A) is formed on a lower electrode (22) made of a conductive material. A buffer layer (28) composed of an amorphous material is formed on the first zirconium oxide layer (26A). A second zirconium oxide layer (26B) is formed on the buffer layer (28), and an upper electrode (24) made of a conductive material is formed on the second zirconium oxide layer (26B).

Description

technical field [0001] The present invention relates to thin film capacitors, and more particularly to the structure of thin film capacitors using a thin film of zirconium oxide or hafnium oxide formed on a semiconductor substrate. Background technique [0002] In the case of forming a film capacitor as a passive element in a semiconductor element, silicon oxide (SiO), silicon nitride (SiN), aluminum oxide (AlO), zirconium oxide (ZrO), and hafnium oxide (HfO), etc. are used as dielectrics Material. Among these dielectric materials, zirconium oxide (zirconium oxide) and hafnium oxide (hafnium oxide) have particularly large dielectric constants and are suitable for forming small and large-capacitance film capacitors. [0003] A film capacitor formed of zirconium oxide (hereinafter referred to as a ZrO film capacitor) is formed on a lower electrode of TiN by, for example, ALD (Atomic Layer Deposition: Atomic Layer Deposition) in a multilayer structure of a semiconductor elemen...

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Problems solved by technology

That is, if ZrO 2 The surface roughness of the film increases, the electrode layer and ZrO 2 The interface of the film (that is, the surface roughness of ZrO 2 On the surface of the film), the electric field concentration becomes larger, thereby increasing the leakage current

[0008] In addition, hafnium oxide HfO as hafnium oxide 2 In the same way, when crystallization occurs, the surface roughness (surface roughness) increases, and there is a problem that the leakage current increases when it functions as a capacitor.

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