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Etching liquid fot titanium or titanium alloy

A technology of etching solution and titanium alloy, applied in the preparation of detergent composition, surface etching composition, detergent mixture composition, etc., can solve the problem of insufficient etching speed, unstable etching, obvious decomposition of hydrogen peroxide, etc. question

Active Publication Date: 2009-08-12
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, hydrogen peroxide-ammonia water-ethylenediaminetetraacetic acid (salt) mixed solution (refer to Patent Documents 1 to 3) and hydrogen peroxide-phosphate mixed solution (refer to Patent Document 4) are known. The etching rate of titanium or titanium alloy is not sufficient, and due to the obvious decomposition of hydrogen peroxide, it cannot be etched stably

Method used

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  • Etching liquid fot titanium or titanium alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In an aqueous solution (etching solution) containing 20% ​​by weight of hydrogen peroxide, 0.3% by weight of phosphoric acid, 0.01% by weight of diethylenetriaminepenta(methylenephosphonic acid) and ammonia, adjusted to pH 9.0, at 40°C Each substrate described below was immersed for 1 minute.

[0023] (1) On a silicon wafer (wafer diameter: 5 inches), form a 2000 thick silicon wafer by sputtering The substrate of the titanium film

[0024] (2) On a silicon wafer (wafer diameter: 5 inches), a 2,000-inch thick film is formed by sputtering copper film substrate

[0025] (3) On a silicon wafer (wafer diameter: 5 inches), a 2000-inch thick film is formed by sputtering aluminum film substrate

[0026] (4) Thickness is formed on the SUS304 material Tin-lead (6:4) plated film substrate (100mm×100mm×0.5mm)

[0027] The dissolution rates of various metal films are shown in Table 1.

Embodiment 2

[0029] Except using the etchant that contains 30% by weight of hydrogen peroxide, 0.2% by weight of phosphonic acid, 0.005% by weight of propylenediaminetetrakis(methylenephosphonic acid) and ammonia, and the pH is adjusted to 8.5, all the other are according to the same method as in Example 1. method to proceed. The results are shown in Table 1.

Embodiment 3

[0031] Except using the etching solution containing 35% by weight of hydrogen peroxide, 0.1% by weight of phosphonic acid, 0.01% by weight of 1-hydroxyethylidene-1,1-diphosphonic acid and ammonia, and adjusting the pH to 8.0, the rest were carried out according to the same embodiment. 1 in the same way. The results are shown in Table 1.

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Abstract

The present invention provides an etching liquid and an etching method that can selectively etch titanium or titanium alloy without etching metals that cannot be etched, such as copper, tin, tin alloys and aluminum. The aforementioned etching liquid is an aqueous solution containing 10 to 40% by weight of hydrogen peroxide, 0.05 to 5% by weight of phosphoric acid, 0.001 to 0.1% by weight of a phosphonic acid-based compound, and ammonia.

Description

technical field [0001] The present invention relates to an etchant and an etching method for selectively etching titanium or a titanium alloy on an object to be etched containing titanium or a titanium alloy and other metals. The etching solution and etching method of the present invention are used in the manufacture of electronic devices such as semiconductor products and printed wiring boards. Background technique [0002] As a general etching method of titanium or titanium alloy, there are known methods of treating with a hydrofluoric acid-nitric acid mixed solution or a hydrofluoric acid-hydrogen peroxide mixed solution. The aforementioned mixture also etches tin, tin alloys, and aluminum at the same time. In addition, hydrogen peroxide-ammonia water-ethylenediaminetetraacetic acid (salt) mixed solution (refer to Patent Documents 1 to 3) and hydrogen peroxide-phosphate mixed solution (refer to Patent Document 4) are known. The etching rate of the titanium or titanium a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/38C23F1/44C23F1/26
CPCC09K13/04C23F1/30C11D2111/10
Inventor 高桥健一细见彰良
Owner MITSUBISHI GAS CHEM CO INC