Method for growing cube-texture yttrium oxide film

A cubic texture, yttrium oxide technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of slow film growth rate and low sputtering yield, etc., to prevent oxidation. Effect

Active Publication Date: 2009-09-30
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sputtering yield of the ceramic oxide target is lower than that of the corresponding metal target, so the film growth rate is slow, and the sputtering power supply of radio frequency must be used

Method used

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  • Method for growing cube-texture yttrium oxide film
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  • Method for growing cube-texture yttrium oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The metal substrate with cubic texture is ultrasonically cleaned with acetone to remove oil, leaving no water marks or stains on the surface. Put the sample into the magnetron sputtering deposition chamber, and evacuate until the background vacuum is less than 5×10 -4 Pa. The substrate was heated up to 500°C, filled with argon to 1×10 -1 Pa; use metal yttrium as the sputtering target material, adopt DC magnetron sputtering deposition technology, sputtering power 100W, target base distance 60mm, start pre-sputtering; 20 minutes later, water vapor is introduced into the cavity to make the moisture in the cavity The partial pressure is 3×10 -3 Pa, control the total pressure in the deposition chamber to 2Pa, and start the formal sputtering deposition. After deposition, Y is obtained 2 o 3 membrane.

[0036] figure 1 Cube texture Y grown on metal NiW substrate for adopting the method of the present invention 2 o 3 X-ray diffraction theta-2theta scan, figure 2 for ...

Embodiment 2

[0038] The metal substrate with cubic texture is ultrasonically cleaned with acetone to remove oil, leaving no water marks or stains on the surface. Put the sample into the magnetron sputtering deposition chamber, and evacuate until the background vacuum is less than 5×10 -4 Pa. The substrate was heated up to 600°C, filled with argon to 3×10 -1 Pa; use metal yttrium as the sputtering target, adopt DC magnetron sputtering deposition technology, sputtering power 300W, target base distance 150mm, start pre-sputtering; 20 minutes later, water vapor is introduced into the chamber to make the water vapor in the chamber The divided voltage is 6×10 -3 Pa, control the total pressure in the deposition chamber to 1Pa, and start the formal sputtering deposition. After deposition, Y is obtained 2 o 3 membrane.

Embodiment 3

[0040] The metal substrate with cubic texture is ultrasonically cleaned with acetone to remove oil, leaving no water marks or stains on the surface. Put the sample into the magnetron sputtering deposition chamber, and evacuate until the background vacuum is less than 5×10 -4 Pa. The substrate was heated up to 700°C and filled with argon to 8×10 -1 Pa; use metal yttrium as the sputtering target, adopt DC magnetron sputtering deposition technology, sputtering power 200W, target base distance 120mm, start pre-sputtering; 20 minutes later, water vapor is introduced into the chamber to make the water vapor in the chamber The divided voltage is 1×10 -3 Pa, control the total pressure in the deposition chamber to 5Pa, and start the formal sputtering deposition. After deposition, Y is obtained 2 o 3 membrane.

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PUM

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Abstract

A method for growing a cubic textured yttrium oxide film layer, comprising: (1) cleaning a metal substrate with a cubic texture, or a single crystal substrate with a cubic structure or a pseudocubic structure; (2) cleaning The above-mentioned substrate is placed in a magnetron sputtering deposition chamber, and the vacuum is evacuated until the back vacuum of the chamber is less than or equal to 5×10-4Pa. The substrate is heated to 500-820°C, and then filled with argon to a cavity pressure of 1×10-1Pa-8×10-1Pa. Using Y metal as the sputtering target, the DC magnetron sputtering deposition method was used to start pre-sputtering; (3) After 20 minutes of pre-sputtering, water vapor was introduced to control the water content in the deposition chamber at 1×10- 3-8×10-3Pa, and adjust the pressure in the deposition chamber to 1Pa-5Pa, start the formal sputtering deposition, after the deposition, the yttrium oxide film is obtained. The prepared yttrium oxide isolation layer has a single cubic texture, so as to meet the requirement of epitaxially growing other isolation layers and growing YBCO coating thereon.

Description

technical field [0001] The invention relates to a preparation method for obtaining diyttrium trioxide with cubic texture. Background technique [0002] Ceramic oxide Diyttrium trioxide (Y 2 o 3 , hereinafter referred to as yttrium oxide), the film prepared by magnetron sputtering is used in many fields, especially in the research of superconducting materials, the yttrium oxide film is often used as the isolation layer. When coating to grow yttrium oxide thin film, ceramic oxide Y 2 o 3 as a target. The sputtering yield of the ceramic oxide target is lower than that of the corresponding metal target, so the film growth rate is slow, and a radio frequency sputtering power supply must be used. The sputtering output of metal materials is high, the growth rate is fast, and a DC sputtering power supply can be used, and the cost is low. Metal materials are used as sputtering targets, and reactive sputtering is required to form corresponding oxides. The invention uses a yttri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/08
Inventor 屈飞杨坚刘慧舟
Owner GRIMAT ENG INST CO LTD
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