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Ultraprecise and low-damage method for polishing large size diamond wafer and device thereof

A polishing device and diamond technology, applied in surface polishing machine tools, grinding/polishing equipment, metal processing equipment, etc., to achieve the effect of solving poor polishing surface quality, low processing cost, and high polishing efficiency

Inactive Publication Date: 2009-10-28
DALIAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an ultra-precision and low-damage polishing method and device for large-size CVD diamond wafers

Method used

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  • Ultraprecise and low-damage method for polishing large size diamond wafer and device thereof
  • Ultraprecise and low-damage method for polishing large size diamond wafer and device thereof

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Embodiment

[0014] as attached figure 1 As shown, the polishing device of the present invention includes a polishing machine body, a polishing disc 2, a polishing head, a dripper 14, a collector ring 10, a polishing machine cover 9, and an external electric heating temperature regulating device 12 and the like. The polishing machine cover 9 is installed on the polishing disc 2 and rotates with the polishing machine, and is mainly used to prevent the splashing of the corrosive polishing liquid. The polishing disc 2 adopts cast iron discs, glass discs, ceramic discs and polishing pads with good corrosion resistance and wear resistance. The polishing head is composed of a glass plate 5, a counterweight A, and a built-in electric heating plate 6 and a thermocouple 3. The bottom of the polishing head adopts a glass disc 5 with excellent corrosion resistance, and the diamond wafer is pasted on the surface of the glass disc. In order to make the diamond wafer stick firmly, first process a shal...

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Abstract

The invention belongs to the technical field of superhard material polishing, and discloses an ultra-precision and low-damage polishing method and device for a large-size diamond wafer. It is characterized in that the polishing device includes a polishing machine body, a polishing disc, a polishing head, a drop feeder, a collector ring, a polishing machine cover, an electric heating temperature adjustment device, and the like. When polishing, the rotational speed of the polishing disc is 50-120r / min; the rotational speed of the polishing head is 30-60r / min, the swing speed of the polishing head is 6-10 times / min; the polishing pressure is 0.2-0.8MPa; the built-in electric heating of the polishing head is used The plate is heated to make the local temperature of the processing area reach 50-150°C; the micro-removal of materials on the surface of the diamond wafer is realized by utilizing the chemical and mechanical composite effect locally generated in the processing area. The effects and benefits of the present invention are that due to the local heating method in the processing area, in the processing of large-size diamond wafers, problems such as deformation of large-size polishing discs and warping deformation of diamond wafers caused by high temperatures can be effectively solved.

Description

technical field [0001] The invention belongs to the technical field of superhard material polishing, and relates to a large-size diamond wafer ultra-precision polishing method and device. Background technique [0002] Diamond is currently the only material with high hardness, high chemical inertness, high thermal conductivity, high elastic modulus, high insulation, wide band gap and low coefficient of friction, and will become an irreplaceable material in many application fields. Many breakthroughs have been made in the preparation technology and performance characterization of chemical vapor deposition diamond (CVD) thin films, making the application of diamond no longer limited to traditional tools, molds and other fields, and gradually to high-tech fields such as optics, thermals, semiconductors, and acoustics. Technology field development. However, due to the restriction of the crystal phase growth mechanism, as the thickness of the wafer increases, its surface roughnes...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B29/00H01L21/304
Inventor 金洙吉苑泽伟康仁科董伯先
Owner DALIAN UNIV OF TECH
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