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Method of preparing monodisperse ternary sulfide AgInS2

A chalcogenide, monodisperse technology, applied in chemical instruments and methods, gallium/indium/thallium compounds, inorganic chemistry, etc., can solve the problems of highly toxic precursors, cumbersome synthesis process, high production cost, etc., and achieve cheap raw materials , simple operation, low cost effect

Inactive Publication Date: 2009-10-28
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the metal-organic monomolecular precursor pyrolysis method can sometimes obtain monodisperse ternary sulfide AgInS 2 However, due to the cumbersome synthesis process of the single-molecule precursor used, the high production cost and the severe toxicity of the precursor itself, the further promotion of this method in the application field is greatly limited.

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  • Method of preparing monodisperse ternary sulfide AgInS2
  • Method of preparing monodisperse ternary sulfide AgInS2
  • Method of preparing monodisperse ternary sulfide AgInS2

Examples

Experimental program
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Effect test

Embodiment 1

[0018] ①In a 100ml flask, add 0.4mmol of silver nitrate, 0.4mmol of indium chloride, and 4mmol of octadecylamine into 39ml of anisole, heat to 60°C and keep it for 1 hour, then add 0.5ml of carbon disulfide, Continue magnetic stirring while adding to prepare AgInS 2 Reaction solution of nanocrystals.

[0019] ②Put the reaction solution prepared according to step ① into a high-pressure reactor with a 50ml polytetrafluoroethylene liner. After reacting at 180°C for 12 hours, the reactor is naturally cooled to 60°C, and 10ml of methanol is added. After centrifugation, use After washing several times with absolute ethanol and vacuum drying the sample, the monodisperse ternary chalcogenide AgInS 2 Nanocrystalline.

[0020] The resulting monodisperse ternary chalcogenide AgInS 2 The X-ray diffraction pattern of nanocrystals is shown in figure 1 a. Depend on figure 1 a It can be seen that the prepared material is orthorhombic AgInS 2 . figure 1 b is to get AgInS 2 The energy-...

Embodiment 2

[0022] ①In a 100ml flask, add 0.4mmol of silver nitrate, 0.4mmol of indium chloride, and 3.2mmol of hexadecylamine into 39ml of anisole, heat to 60°C and keep it for 1 hour, then add 1ml of carbon disulfide, Continue magnetic stirring while adding to prepare AgInS 2 Reaction solution of nanocrystals.

[0023] ②Put the reaction solution prepared according to step ① into a high-pressure reactor with a 50ml polytetrafluoroethylene liner. After solvothermal heating at 180°C for 24 hours, the reactor is naturally cooled to 60°C, and 10ml of methanol is added. After centrifugation, Wash several times with absolute ethanol, and vacuum-dry the sample to obtain a monodisperse ternary chalcogenide AgInS similar to Example 1. 2 Nanocrystalline.

[0024] image 3 is the resulting ternary chalcogenide AgInS 2 High-resolution TEM images of nanocrystals. It can be seen from the figure that the ternary chalcogenide AgInS 2 The nanocrystals have clear lattice fringes, illustrating that t...

Embodiment 3

[0026] ①In a 100ml flask, add 0.8mmol of silver nitrate, 0.8mmol of indium chloride, and 10mmol of oleylamine into 39ml of anisole, heat to 60°C and keep it for 1 hour, add 0.5ml of carbon disulfide, add While continuing to stir magnetically, the preparation of AgInS 2 Reaction solution of nanocrystals.

[0027] ②Put the reaction solution prepared according to step ① into a high-pressure reactor with a 50ml polytetrafluoroethylene liner. After solvothermal heating at 160°C for 24 hours, the reactor is naturally cooled to 60°C, and 10ml of methanol is added. After centrifugation, Wash the sample several times with absolute ethanol and vacuum dry the sample to obtain the monodisperse ternary chalcogenide AgInS 2 Nanocrystalline.

[0028] Figure 4 is the resulting monodisperse ternary chalcogenide AgInS 2 TEM image of nanocrystals. It can be seen from the figure that the morphology and size of the product of this example are almost the same as those of Example 1, and can se...

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Abstract

The invention relates to a method for preparing monodisperse ternary chalcogenide AgInS2, which belongs to the technical field of nanometer material preparation. Monodisperse ternary chalcogenide AgInS2 nanocrystals were prepared by chemical solution method with alkylamine as surfactant. First, silver salt, indium salt, sulfur source and alkylamine are dispersed in a solvent to prepare a reaction solution, and then the prepared reaction solution is subjected to solvothermal treatment to obtain a monodisperse ternary chalcogenide AgInS2 nanometer with regular morphology. crystal. The method of the invention is simple and low in cost, and can synthesize monodisperse AgInS2 nano crystals on a large scale. The prepared AgInS2 nanocrystal is in the shape of a cuboid with a size of 17±0.5 nanometers, and can be self-assembled in a wide range to form a single-layer nano-superlattice.

Description

technical field [0001] The invention relates to a ternary chalcogenide AgInS 2 The preparation method, especially relates to a monodisperse ternary chalcogenide AgInS 2 The preparation method of monodisperse ternary chalcogenide AgInS was prepared by chemical solvothermal method 2 . It belongs to the technical field of nanometer material preparation. Background technique [0002] Colloidal inorganic nanocrystals have attracted extensive attention from researchers in many fields. These nanocrystals have size- or shape-dependent properties and often exhibit novel electrical, magnetic, optical, and mechanical properties distinct from their bulk counterparts. Among numerous nanocrystals, colloidal semiconducting sulfides have received more research attention and achieved remarkable achievements, because these semiconducting nanocrystals exhibit obvious size confinement effects and size-dependent luminescent properties. Therefore, these semiconductor nanocrystals have been a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00B82B3/00
Inventor 杜卫民钱雪峰
Owner SHANGHAI JIAOTONG UNIV
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