Method for growing cube-texture yttrium-stabile zirconium dioxide film

A zirconium dioxide film, cubic texture technology, applied in coating, metal material coating process, ion implantation plating and other directions, can solve the problems of slow film growth rate, low sputtering yield, etc. The effect of oxidation

Active Publication Date: 2009-11-04
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sputtering yield of the ceramic oxide target is lower than that of the corresponding metal target, so the film growth rate is slow, and the sputtering power supply of radio frequency must be used

Method used

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  • Method for growing cube-texture yttrium-stabile zirconium dioxide film
  • Method for growing cube-texture yttrium-stabile zirconium dioxide film
  • Method for growing cube-texture yttrium-stabile zirconium dioxide film

Examples

Experimental program
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Effect test

Embodiment 1

[0035] The metal substrate with a cubic texture oxide isolation layer is ultrasonically cleaned and degreasing with acetone, leaving no water marks or stains on the surface. Put the sample into the magnetron sputtering deposition chamber and evacuate until the background vacuum is less than 5×10 -4 Pa. The substrate is heated to 800°C and filled with argon to 2×10 -1 Pa; Using metal YSZ wafer as the sputtering target, using DC magnetron sputtering deposition technology, sputtering power 320W, target base distance 120mm, start pre-sputtering; 20 minutes later, water vapor into the cavity to make the cavity Water vapor partial pressure is 1×10 -2 Pa, control the total pressure in the deposition chamber to 2 Pa, and start the formal sputtering deposition. After the deposition, the YSZ film is obtained.

[0036] figure 1 In order to adopt the method of the present invention, 2 O 3 Cubic texture YSZX-light diffraction θ-2θ scanning grown on the metal NiW substrate of the isolation la...

Embodiment 2

[0038]The metal substrate with a cubic texture oxide isolation layer is ultrasonically cleaned and degreasing with acetone, leaving no water marks or stains on the surface. Put the sample into the magnetron sputtering deposition chamber and evacuate until the background vacuum is less than 5×10 -4 Pa. The substrate is heated to 620℃ and filled with argon to 1×10 -1 Pa; Using metal YSZ wafer as the sputtering target, using DC magnetron sputtering deposition technology, sputtering power 400W, target base distance 150mm, start pre-sputtering; 20 minutes later, water vapor is injected into the cavity to make the cavity Water vapor partial pressure is 1.5×10 -2 Pa, control the total pressure in the deposition chamber to 1 Pa, and start the formal sputtering deposition. After the deposition, the YSZ film is obtained.

Embodiment 3

[0040] The metal substrate with cubic texture is ultrasonically cleaned with acetone to remove oil without leaving water marks and stains on the surface. Put the sample into the magnetron sputtering deposition chamber and evacuate until the background vacuum is less than 5×10 -4 Pa. The substrate is heated to 650℃ and filled with argon gas to 8×10 -1 Pa; Using metal YSZ wafer as the sputtering target material, using DC magnetron sputtering deposition technology, sputtering power 120W, target base distance 60mm, start pre-sputtering; 20 minutes later, water vapor is injected into the cavity to make the cavity Water vapor partial pressure is 1×10 -3 Pa, control the total pressure in the deposition chamber to 5 Pa, and start the formal sputtering deposition. After the deposition, the YSZ film is obtained.

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Abstract

A method for growing of a cubic-texture yttrium-stabilized zirconia film layer comprises: firstly, performing cleaning of a metal substrate with cubic textures, or a metal substrate with a cubic-texture oxide insulation layer, or a mono-crystal substrate with cubic structures or false cubic structures; secondly, placing the cleaned substrate in a magnetic-control sputtering deposition chamber; conducting vacuum-pumping until the background pressure of the chamber is less than or equal to 5 multiply 10-4Pa; heating the substrate to 6600-850 DEG C; filling with argon until the pressure of the chamber becomes 1multiply 10-1Pa-8multiply 10-1Pa; and beginning pre-sputtering with metal Zr-Y as the target material by the method of direct-current magnetic-control sputtering deposition; thirdly, pumping in water vapor after pre-sputtering for 20 minutes; controlling the water content in the deposition chamber at 1multiply 10-3-3.5multiply10-3Pa and regulating the internal pressure of the deposition chamber to 1Pa-5Pa; and beginning sputtering deposition formally. An yttrium-stabilized zirconia film is obtained after completion of the deposition. The obtained yttrium-stabilized zirconia insulation layer has single cubic textures, thus satisfying the outward extending growth requirement of other insulation layers and YBCO coating.

Description

Technical field [0001] The invention relates to a preparation method for obtaining cubic texture yttrium stabilized zirconium dioxide. Background technique [0002] Ceramic oxide yttrium stabilized zirconia (Z r O 2 -Y 2 O 3 , Hereinafter referred to as YSZ), the film is prepared by magnetron sputtering and used in many fields, especially in the research of superconducting materials, YSZ film is often used as the isolation layer, under normal circumstances, the magnetron sputtering method is used for coating When growing YSZ thin films, ceramic oxide YSZ is used as the target. The sputtering yield of the ceramic oxide target material is lower than that of the corresponding metal target material, so the film-forming growth rate is slow, and a radio frequency sputtering power supply must be used. The sputtering yield of metal materials is high, the growth rate is fast, and the DC sputtering power supply can be used, and the cost is low. Using metallic materials as sputtering target...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/08
Inventor 杨坚刘慧舟屈飞
Owner GRIMAT ENG INST CO LTD
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