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Method and device for preparing dielectric film of BaTiO3 doping metallic ion

A technology of metal ions and dielectric films, applied in the field of preparation of dielectric films BaTiO3 doped with metal ions, can solve the problems of high cost and complex process, and achieve the effect of improving performance, process and simple structure

Inactive Publication Date: 2007-08-15
DALIAN MARITIME UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the invention is to solve BaTiO 3 The disadvantages of complex process and high cost, the preparation and improvement of the production of BaTiO 3 performance, providing dielectric thin film BaTiO 3 Preparation method and device for doping metal ions, simple process and equipment, suitable for large-scale production of (Ba, X)TiO doped with metal ions 3 Film preparation method

Method used

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  • Method and device for preparing dielectric film of BaTiO3 doping metallic ion

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Experimental program
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Embodiment 1

[0021] The concentration is 0.1mol / L Ba(OH) 2 The solution is used as the electrolyte solution 4, stirred at a stirring speed of 120 rpm for 5 minutes, and a DC pulse voltage is applied between the anode 5 and the cathode 8, and the surface of the anode Ti is formed into a plasma discharge, and the discharge time is 10 to 20 minutes. The anode 5 BaTiO with a thickness of 10-15 μm is formed on the surface 3 film layer.

Embodiment 2

[0023] The concentration is 0.1mol / L Ba(OH) 2 Add 10g / L Ca(OH) to the solution 2 , prepare electrolyte solution 4, stir at a stirring speed of 120 rpm for 5 minutes, apply a DC pulse voltage between the anode 5 and the cathode 8, the surface of the anode Ti forms a plasma discharge, and the discharge time is 10 to 20 minutes. (Ba, Ca)TiO with a thickness of 15-20 μm is formed on the surface 3 film layer.

Embodiment 3

[0025] The concentration is 0.1mol / L Ba(OH) 2 Add 10g / L Na to the solution 2 SnO 3 , prepare electrolyte solution 4, stir at a stirring speed of 120 rpm for 5 minutes, apply a DC pulse voltage between the anode 5 and the cathode 8, the surface of the anode Ti forms a plasma discharge, and the discharge time is 10 to 20 minutes. (Ba, Sn)TiO with a thickness of 15-20 μm is formed on the surface 3 film layer.

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Abstract

The invention discloses a preparing method of dielectric film BaTiO3 doping metallic ion and device in electronic engineering technical domain, which comprises the following steps: choosing alkaline agent Ba(OH)2 electrolytic solution; adding into WO42-, Mo7O242- and SnO32- acid ion salt with content at 5-15g / L at the same time; proceeding micro plasma oxidation treatment; forming (Ba, Ca)TiO3, (Ba, W)TiO3, (Ba, Sn)TiO3 film layer on the surface of anode; consisting this device with impulsing power source, negative pole, anode, electrolytic solution, positive electrode, negative electrode and oxidation treatment ditch. This invention possesses simple device, which can be utilized widely.

Description

technical field [0001] The invention belongs to the technical field of electronic engineering and relates to a dielectric film BaTiO 3 A preparation method and device for doping metal ions. Background technique [0002] At present, electronic components are developing in the direction of light weight, thinning and ultra-miniaturization. Improving the room temperature dielectric constant of dielectric materials and reducing dielectric loss and temperature coefficient have become research hotspots in the scientific and technological circles. BaTiO 3 It is a ferroelectric material and is known as "the pillar of the electronics industry". But due to the molecular structure, making t c Higher than 120°C, that is, only at 120°C is the maximum dielectric constant value ~ 10 4 The dielectric constant at room temperature is only 1 / 5 to 2000 of the Curie point, which greatly affects its performance. The current industrial solution is to use solid-phase doping method in the manufa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/26
Inventor 高玉周张会臣王亮许晓磊于志伟刘世永
Owner DALIAN MARITIME UNIVERSITY