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Method for producing photo quantum-point by gas-phase conformal thin-film growth

A technology of thin film growth and quantum dots, applied to the structure of optical resonant cavity, laser, electrical components, etc., can solve the problems of silicon-based optical microcavity that have not been reported, and achieve easy process, reduce etching process, and less process Effect

Inactive Publication Date: 2007-09-05
NANJING UNIV
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Problems solved by technology

One-dimensional and two-dimensional silicon-based microcavities have been realized in many laboratories, but there is no report showing that a true three-dimensional DBR-confined silicon-based optical microcavity has been realized.

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  • Method for producing photo quantum-point by gas-phase conformal thin-film growth
  • Method for producing photo quantum-point by gas-phase conformal thin-film growth
  • Method for producing photo quantum-point by gas-phase conformal thin-film growth

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Embodiment Construction

[0045] Using a specially designed template and photolithography and reactive ion etching (RIE) techniques, a cylindrical platform with a lateral dimension of 2 μm and a height of 1 μm was fabricated on a flat glass substrate (see Figure 2a). Then three-dimensional confined amorphous silicon nitride optical photonic quantum dots were prepared by plasma-enhanced chemical vapor deposition (PECVD) gas phase conformal film growth (see Figure 2b).

[0046] 1. Using photolithography and reactive ion etching (RIE) technology, a cylindrical platform with a lateral size of 2 μm and a height of 1 μm is fabricated on a glass substrate.

[0047] a) Stencil design: A photolithography stencil is prepared by microelectronic planar process plate-making technology, and the pattern is a square with a side length of 2 μm.

[0048] b) Pattern transfer I: transfer the template pattern to the Cr film coated on the glass substrate by using the microelectronic planar process photolithography technolog...

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Abstract

The invention is concerned with the on quantum point that growth prepares by the gas-phase sharing-shape thin film, it is: sets a column platform on the glass and the silicon substrate with 0.5-5 mu m landscape orientation size and the 0.4-2 mu m height; sets the micro-cavity that the a-SiNz is the gas-phase sharing-shape thin film growth preparation active layer and limits three-dimensionally by the DBR; sets two DBR located at both sides of the active layer, the resonance wave length of the micro-cavity is lambda, the DBR includes low refractive index layer with 6+-2 periods and a-SiNx / a-SiNy thin film with high refractive index layer, the thickness of each refractive index layer islambda / (4n); n is the refractive index, the active layer is the a-SiNx thin film that the refractive index is between the low refractive index layer and the high refractive index layer, the thickness islambda / (2n).

Description

1. Technical field: [0001] The invention relates to a method for preparing photon quantum dots by gas-phase conformal thin film growth, in particular a new method for preparing distributed Bragg reflection (DBR) three-dimensional confinement silicon-based optical microcavities by using conformal thin film growth technology. This new method enables the size of the microcavity to be comparable to the wavelength of the emitter not only in the longitudinal direction but also in the lateral direction, and the structure constitutes a photonic quantum dot. The side Bragg reflection layer formed by conformal growth replaces the side air interface reflection surface formed by conventional etching method, which significantly improves the efficiency of lateral confinement of photons in the microcavity and realizes three-dimensional confinement of photons. 2. Background technology: [0002] An optical microcavity is an optical microstructure that confines resonant light to a submicron-s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00H01S5/10
Inventor 陈坤基陈三钱波李卫张贤高李伟徐骏黄信凡
Owner NANJING UNIV