Check patentability & draft patents in minutes with Patsnap Eureka AI!

Cubic aluminum formate, gallium formate and preparing method

A technology of aluminum formate and formic acid, applied in the preparation of carboxylate, etc.

Inactive Publication Date: 2007-09-12
LIAONING NORMAL UNIVERSITY
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no report on cubic gallium formate, and its crystal parameters are: a=b=c=11.540 Ȧ, space group: Im-3, which has the same structure as cubic aluminum formate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cubic aluminum formate, gallium formate and preparing method
  • Cubic aluminum formate, gallium formate and preparing method
  • Cubic aluminum formate, gallium formate and preparing method

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0009] Example 1 Aluminum nitrate and formic acid redox reaction to remove nitrate preparation method

[0010] Weigh 1.0g Al(NO 3 ) 3 9H 2 O, first add 1 / 10 of it to about 40mL of formic acid (88%) or anhydrous formic acid. After about 5 minutes, formic acid and nitrate undergo a redox reaction to generate CO2 and NO, and then add the remaining Al(NO 3 ) 3 9H 2 O (in order to control the reaction rate, the reaction can be placed in a condensed water bath). During the reaction process, a large amount of formed [Al(HCOO) 3 3 / 4 CO 2 1 / 4H 2 O·1 / 4 HCOOH] cubic aluminum formate crystals produced. After filtering, place it in a desiccator with Na(OH) as desiccant and dry it. Yield is more than 70% (as Al(NO 3 ) 3 9H 2 O meter).

example 2

[0011] Example 2 Acid-base neutralization method of Al(OH)3 and formic acid in CO2 atmosphere

[0012] Add 2.0g of Al(OH)3 solid to a 250mL three-necked bottle filled with 80mL formic acid (88%) or anhydrous formic acid. Heating to reflux and feeding CO2 gas to react for 3 days. XRD shows that Al(OH)3 has all produced cubic aluminum formate. After filtering, the product is dried in a desiccator using Na(OH) as desiccant. The yield is over 90% (calculated as Al(OH)3). For mass production of cubic aluminum formate, the reaction temperature should be above 100°C, and the CO2 atmosphere pressure should be carried out in a reactor above 1 bar, which will greatly shorten the reaction time.

[0013] There are two specific preparation methods for cubic gallium formate:

example 3

[0014] Example 3 Preparation method of gallium nitrate and formic acid redox reaction to remove nitrate

[0015] Weigh 1.0g Ga(NO 3 ) 3 ·xH 2 O, first add 1 / 10 of it to about 40mL of formic acid (88%) or anhydrous formic acid. After about 5 minutes, formic acid and nitrate undergo a redox reaction to generate CO2 and NO, and then add the remaining Ga(NO 3 ) 3 ·xH 2 O (in order to control the reaction rate, the reaction can be placed in a condensed water bath). During the reaction process, a large amount of generated composition is [Ga(HCOO) 3 3 / 4 CO 2 1 / 4H 2 O · 1 / 4 HCOOH] cubic indium formate (space group: Im-3) crystals produced. After filtering, the product is dried in a desiccator using Na(OH) as desiccant. The yield is above 80% (with Ga(NO 3 ) 3 ·xH 2 O meter).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to View More

Abstract

This invention relates to anhydrous cubic Al formate and Ga formate and their preparation method aiming at providing a compound of organic Al and Ga in a pure sinlge object phase to be the precursor of advanced ceramic material Al2O3 and semiconductor material Ga2O3 nm particles, in which, the structure of the cubic Al formate includes: a=b=c=11.448 and the space group: Im-3, the cubic Ga formate: a=b=c=11.540 and the space group: Im-3. The product is affirmed to be a 3-D coordinated polymer tested by an X-ray monocrystal diffractor, the chemical formula is [M(HCOO)3.3 / 4CO2.1 / 4 H2O.1 / 4HCOOH], the framework structure of M(HCOO)3 is shown in the ReO3 topology, and CO2, H2O and HCOOH are object molecules, and the test result of X-ray powder diffraction is the same to the analog result of its monocrystal diffraction and the product is shown to be a sinlge pure phase, and experiment shows that AlO2 and Ga2O3 particles can be got by thermo-analysis of cubic Al formate and In formate.

Description

technical field [0001] The invention relates to cubic aluminum formate and gallium formate and a preparation method thereof. The general chemical formula of cubic aluminum formate and gallium formate is [M(HCOO) 3 3 / 4 CO 2 1 / 4H 2 O·1 / 4 HCOOH], M(HCOO) 3 The skeleton structure is in ReO3 topology, where CO 2 、H 2 O and HCOOH are guest molecules. A literature search shows that the chemical formula of cubic aluminum formate has been mistaken for [Al(HCOO) 3 ·xH 2 O]; Cubic gallium formate is a new compound, and they are all precursors for the preparation of oxide nanoparticles by thermal decomposition. The preparation methods of cubic aluminum formate include: (1) under CO2 atmosphere, use Al(OH)3 and formic acid reaction preparation method, including normal pressure and non-pressure reaction preparation; (2) aluminum nitrate and formic acid reaction preparation method, this method is in The CO2 produced during the redox reaction between nitrate and formic acid provides ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07C53/06C07C51/41
Inventor 田运齐
Owner LIAONING NORMAL UNIVERSITY
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More