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Method for forming nickel silicide by plasma annealing

A plasma and nickel silicide technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increasing cost and time-consuming, and achieve the goal of reducing process and equipment cost, simplifying process and shortening process time. Effect

Inactive Publication Date: 2007-10-10
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that in the traditional method, two annealing steps are required, which is not only time-consuming, but also increases the cost.

Method used

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  • Method for forming nickel silicide by plasma annealing
  • Method for forming nickel silicide by plasma annealing
  • Method for forming nickel silicide by plasma annealing

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Embodiment Construction

[0025] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings, but the present invention is not limited thereto. The relative positions, intervals and dimensions of each element or component shown in the drawings are not drawn to scale, but are selectively enlarged, reduced or otherwise adjusted for clarity. It will also be appreciated by those skilled in the art that for clarity and to reduce the number of drawings, certain aspects that may be commonly or specifically used in the manufacture of semiconductor devices, including, for example, photoresist patterns and multilayer metallization structures, have been omitted. Some layers used.

[0026] As shown in FIG. 3 , an exemplary method of forming nickel silicide according to the present invention is performed in the following steps.

[0027] First, the exposed silicon surface is pre-cleaned to remove native oxide. The pre-cleaning treatment can use all existing techn...

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Abstract

Specifically, the method for forming nickel silicide by using plasma heating in plasma deposition process to carry out annealing treatment includes following steps: pre-cleaning exposed surface of silicon in order to remove natural oxide; depositing nickel or nickel alloy on surface of silicon cleaned, and under first temperature heated by plasma, at least parts of nickel or nickel alloy reacts with silicon to form nickel silicide in high resistance; removing unreacted nickel or nickel alloy; under second temperature, carrying out annealing treatment to convert nickel silicide to low resistance from high resistance. Without need of first annealing step in traditional technique, the invention forms nickel silicide in high resistance by using annealing treatment of plasma in procedure of depositing nickel or nickel alloy. Thus, the invention simplifies technical procedure, shortens technical time.

Description

technical field [0001] The invention relates to a method for heat treatment of materials by using the characteristic of plasma heating in the plasma process, in particular, it relates to the process of forming nickel silicide by using the plasma heating in the plasma deposition process, especially the ion bombardment heating for annealing The method, more particularly, relates to a method of forming low resistance nickel silicide on exposed silicon surfaces. Background technique [0002] As the level of integration of semiconductor devices continues to increase and the critical dimensions associated with these devices continue to decrease, there is increasing interest in fabricating semiconductor devices from low resistance materials to maintain or reduce signal delays. Silicide and salicide materials and processes have been widely used to reduce the sheet resistance and contact resistance of gate conductors and source / drain regions of CMOS devices. [0003] A variety of me...

Claims

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Application Information

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IPC IPC(8): H01L21/3205H01L21/283H01L21/336
Inventor 莫鸿翔吴汉明
Owner SEMICON MFG INT (SHANGHAI) CORP