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Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+

A laser crystal, anti-radiation technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc.

Inactive Publication Date: 2007-10-31
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

According to retrieval, there is no information about Yb, Er:A at home and abroad. 3 sc 2 B 3 o 12 A report on scandium-like garnet crystals

Method used

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  • Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1: Growth of low-doped Er 3+Ion concentration of Yb,Er:GSGG(Gd 3 sc 2 Ga 3 o 12 ) crystal

[0019] Low doped Er 3+ The ion concentration of Yb, Er: GSGG crystal refers to Er 3+ The doping concentration of ions is between 0.5-3at%, it can output 1.5μm laser, and the polycrystalline raw material prepared by solid phase method or liquid phase method can grow low-doped Er 3+ Yb,Er:GSGG single crystal.

Embodiment 2

[0020] Example 2: Growth of high Er-doped 3+ Ion concentration of Yb,Er:GSGG(Gd 3 sc 2 Ga 3 o 12 ) crystal

[0021] Highly doped Er 3+ The ion concentration of Yb, Er: GSGG crystal refers to Er 3+ The doping concentration of ions is between 30-50at%, it can output 2.8μm laser, and the polycrystalline raw material prepared by solid-phase method or liquid-phase method can grow high-doped Er 3+ Yb,Er:GSGG single crystal.

Embodiment 3

[0022] Embodiment 3: realize Yb, Er:GSGG (Gd 3 sc 2 Ga 3 o 12 ) An experimental device for laser output near the 1.5μm band of the crystal

[0023] Using 940nm semiconductor laser to pump Yb, Er:GSGG(Yb 3+ The doping concentration is 1-10at%, Er 3+ Doping concentration of 0.5-3at%) crystal components. The experimental setup is shown in Figure 1. In the figure, 1 is a Yb, Er: GSGG crystal element; 2 is a 940nm semiconductor laser; 3 is a dielectric mirror for total reflection at a wavelength near 1.5 μm and full transmission at 940 nm; 4 is a medium for partial transmission at a wavelength near 1.5 μm and total reflection at 940 nm mirror; 5 is the LPE-1A laser energy meter; 6 is the focusing lens.

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Abstract

The invention discloses a laser crystal with scandium stone garnet of high effective radio resistant Yb3+ sensitizing Er3+, which is characterized by the following: setting molecular formula of the crystal as Yb3+, Er3+:A3Sc2B3O12[A=Gd, Y, Lu; B=Ga, Al]; setting Yb3+ and Er3+ as A3+ with displace dodecahedron central position; absorbing energy with Yb3+ as sensitizing ion; passing to active ion Er3+; dividing laser wave range at nearby of 1. 5 mum and 2. 7-3 mum through highly doped and lowly doped of Er3+ ion concentration. This laser can be used to medical, light communication, scientific study and military domain, which can meet the need of space environment application.

Description

technical field [0001] The invention belongs to the field of functional crystal materials, in particular to a high-efficiency radiation-resistant scandium-containing garnet laser crystal. technical background [0002] In space science research, lasers may be irradiated by gamma rays and high-energy particles, which requires lasers to be resistant to ray radiation and the impact of high-energy particles. Therefore, highly efficient radiation-resistant laser materials are of great significance for the development of space laser technology. [0003] Scandium-containing garnet crystal A 3 sc 2 B 3 o 12 [A=Gd, Y, Lu; B=Ga, Al] is a laser working matrix with excellent performance. The crystal structure belongs to the cubic crystal system, and single crystals with high optical quality can be grown by the melt pulling method. Danileiko et al. (Yu.K.Danileko et al.Sov.J.Quantum Electron., 1985, 15:286) reported that Nd, Cr: GSGG (Gd 3 sc 2 Ga 3 o 12 ) did not reach its damage...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B11/00
Inventor 孙敦陆殷绍唐张庆礼
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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