Plasma doping method

A plasma and plasma source technology, applied in the field of plasma doping, can solve the problems of large dispersion of emitted waves, poor controllability and reproducibility of doping concentration, etc., and achieve the effect of stable low-concentration doping

Inactive Publication Date: 2007-12-12
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the large dispersion of the emitted wave, the controllability and reproducibility of the doping concentration deteriorate.

Method used

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Embodiment 1

[0056] Hereinafter, a plasma doping method according to Embodiment 1 of the present invention will be described with reference to FIG. 1 .

[0057] FIG. 1 is a cross-sectional view of a plasma doping apparatus used for doping by a plasma doping method according to Embodiment 1 of the present invention. In FIG. 1 , a predetermined gas is supplied from a gas supply device 2 into an inner space 1 a of a vacuum vessel 1 and exhausted by a turbo molecular gas pump 3 as an exhaust device. The internal space 1a of the vacuum container 1 is kept at a predetermined pressure by the pressure regulating valve 4, and at the same time, a high frequency of 13.56 MHz is supplied from the high-frequency power supply 5 to the helical coil 8 provided near the dielectric window 7 facing the sample electrode 6. frequency power. As a result, inductively coupled plasma is generated in the internal space 1 a of the vacuum vessel 1 , and the plasma doping process can be performed on the silicon subst...

Embodiment 2

[0064] Next, a plasma doping method according to Embodiment 2 of the present invention will be described with reference to FIG. 1 as in Embodiment 1. FIG. The matters described in Embodiment 1 in FIG. 1 are also referred to Embodiment 2 in the same manner.

[0065] The structure and basic operation of the plasma doping device in FIG. 1 have been described in detail in the above-mentioned embodiment 1 of the present invention, so repeated descriptions are omitted.

[0066] In FIG. 1 , after placing the silicon substrate 9 on the sample electrode 6, while maintaining the temperature of the sample electrode 6 at 10° C., argon gas was introduced into the vacuum vessel 1 at 50 sccm and acetonitrile as a doping source gas was input at 3 sccm. Borane (B 2 h 6 )gas. While controlling the pressure in the vacuum vessel 1 to a first pressure of 0.8 Pa, 800 W of high-frequency power was supplied to the coil 8 serving as a plasma source to generate plasma in the vacuum vessel 1 . One s...

Embodiment 3

[0072] Next, a plasma doping method according to Embodiment 3 of the present invention will be described with reference to FIG. 1 as in Embodiment 1. FIG. The matters described in Embodiment 1 in FIG. 1 are also referred to Embodiment 3 in the same manner.

[0073] The structure and basic operation of the plasma doping device in FIG. 1 have been described in detail in the above-mentioned embodiment 1 of the present invention, so repeated descriptions are omitted.

[0074] In FIG. 1 , after placing the silicon substrate 9 on the sample electrode 6, while keeping the temperature of the sample electrode 6 at 10° C., helium gas and 3 sccm of helium gas as the dopant source gas were introduced into the vacuum vessel 1 at 50 sccm. Diborane (B 2 h 6 )gas. While controlling the pressure in the vacuum vessel 1 to a first pressure of 3 Pa, 100 W of high-frequency power was supplied to the coil 8 serving as a plasma source to generate plasma in the vacuum vessel 1 . After 1 second of...

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Abstract

A plasma doping method for realizing the stable low concentration doping adds impurity to the sample or the film at the surface of the sample, the invention is characterized in that the method comprises the following three steps, the first step is placing sample at the sample electrode in the vacuum container; the second step is inputting the doping raw gas into the vacuum container and discharging gas from the vacuum container at the same time, controlling the pressure in the vacuum container in the first pressure and at the same time providing high-frequency power to the plasma source to generate plasma in the vacuum container; and the third step is controlling the pressure in the vacuum container to a second pressure lower than the first pressure and at the same time supplying high-frequency power larger than the high-frequency power of the second stage to the plasma source at the state the generation of plasma is guaranteed.

Description

[0001] This application is a divisional application of the Chinese patent application entitled "Plasma Doping Method and Plasma Doping Device" with Chinese Application No. 03127235.5 filed on September 30, 2003. technical field [0002] The present invention relates to a plasma doping method for doping (adding) impurities on the surface of a solid sample such as a semiconductor substrate and an apparatus for implementing the method. Background technique [0003] The technique of doping impurities on the surface of a solid sample is, for example, the plasma doping method disclosed in U.S. Patent No. 4,912,065, which ionizes impurities and dopes them into solids with low energy. [0004] Hereinafter, a conventional plasma doping method as a method of impurity doping will be described with reference to FIG. 14 . [0005] FIG. 14 shows the basic structure of a plasma doping apparatus used in a conventional plasma doping method. In FIG. 14 , a sample electrode 106 for placing a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/223H01L21/263H01J37/32H05H1/46H01L21/22H01L21/265
Inventor 奥村智洋中山一郎水野文二佐佐木雄一朗
Owner PANASONIC CORP
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