A kind of preparation method of silicon-doped high-performance graphene material

A graphene and silicon doping technology, applied in the field of graphene doping, can solve the problems of no environmental protection, mild reaction conditions, etc., and achieve the effects of low cost, mild reaction conditions and wide material sources

Active Publication Date: 2020-08-18
SHAOXING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems in the prior art, the present invention provides a method for preparing a silicon-doped high-performance graphene material, which solves the blank of silicon-doped graphene in the prior art, and not only fills the gap in the preparation method of silicon-doped graphene. Blank, and the reaction conditions are mild, no environmental problems

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  • A kind of preparation method of silicon-doped high-performance graphene material
  • A kind of preparation method of silicon-doped high-performance graphene material

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Embodiment 1

[0033] A kind of preparation method of silicon-doped high-performance graphene material, described preparation method comprises the steps:

[0034] Step 1, adding graphene oxide to deionized water, and then adding a dispersant to ultrasonically disperse for 20 minutes to obtain a graphene oxide dispersion;

[0035] Step 2, adding the sodium hydroxide solution to the graphene oxide dispersion for 1 hour of microwave reaction to obtain an alkalized graphene oxide dispersion;

[0036] Step 3, adding ethyl silicate and tea polyphenols to absolute ethanol in sequence, stirring evenly, and slowly adding them dropwise into the alkalized graphene oxide dispersion for gradient microwave reaction for 3 hours to obtain a reaction mixture;

[0037] Step 4, adding hydrochloric acid to the reaction mixture until neutrality is formed, then ultrasonically reacting for 30 minutes, and obtaining graphene precipitation after filtration;

[0038] Step 5, putting the graphene precipitate into abs...

Embodiment 2

[0050] A kind of preparation method of silicon-doped high-performance graphene material, described preparation method comprises the steps:

[0051] Step 1, adding graphene oxide to deionized water, and then adding a dispersant to ultrasonically disperse for 40 minutes to obtain a graphene oxide dispersion;

[0052] Step 2, adding the sodium hydroxide solution to the graphene oxide dispersion and reacting with microwaves for 3 hours to obtain an alkalized graphene oxide dispersion;

[0053] Step 3, adding ethyl silicate and tea polyphenols to absolute ethanol in sequence, stirring evenly and slowly adding them dropwise to the alkalized graphene oxide dispersion for 5 hours of gradient microwave reaction to obtain a reaction mixture;

[0054]Step 4, adding hydrochloric acid to the reaction mixture until neutrality is formed, then ultrasonically reacting for 60 minutes, and obtaining graphene precipitation after filtration;

[0055] Step 5, put the graphene precipitate into abso...

Embodiment 3

[0067] A kind of preparation method of silicon-doped high-performance graphene material, described preparation method comprises the steps:

[0068] Step 1, adding graphene oxide to deionized water, and then adding a dispersant to ultrasonically disperse for 30 minutes to obtain a graphene oxide dispersion;

[0069] Step 2, adding the sodium hydroxide solution to the graphene oxide dispersion and reacting with microwaves for 2 hours to obtain an alkalized graphene oxide dispersion;

[0070] Step 3, adding ethyl silicate and tea polyphenols to absolute ethanol in sequence, stirring evenly, and slowly adding them dropwise into the alkalized graphene oxide dispersion liquid for gradient microwave reaction for 4 hours to obtain a reaction mixture;

[0071] Step 4, adding hydrochloric acid to the reaction mixture until neutrality is formed, then ultrasonically reacting for 50 minutes, and obtaining graphene precipitation after filtration;

[0072] Step 5, put the graphene precipita...

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Abstract

The invention discloses a method for preparing a silicon-doped high-performance graphene material. In step 1, graphene oxide is added to deionized water, and then a dispersant is added for ultrasonic dispersion for 20-40 minutes to obtain a graphene oxide dispersion; step 2 , adding sodium hydroxide solution to the graphene oxide dispersion and microwave reaction for 1-3h to obtain an alkalized graphene oxide dispersion; step 3, adding ethyl silicate and tea polyphenols to absolute ethanol in sequence, stirring After uniformity, slowly drop it into the alkalized graphene oxide dispersion and react with gradient microwave for 3-5h to obtain a reaction mixture; step 4, add hydrochloric acid to the reaction mixture until neutrality is formed, then ultrasonically react for 30-60min, and filter Finally, the graphene precipitation is obtained; in step 5, the graphene precipitation is put into absolute ethanol for ultrasonic reaction for 20-40min, filtered and dried to obtain a silicon-doped graphene material. The invention not only fills the gap in the preparation method of silicon-doped graphene, but also has mild reaction conditions and no environmental protection problems.

Description

technical field [0001] The invention belongs to the technical field of graphene doping, and in particular relates to a method for preparing a silicon-doped high-performance graphene material. Background technique [0002] The discovery of graphene confirmed the stable existence of two-dimensional materials and opened up a new stage of research on two-dimensional materials. The carrier mobility can reach 200,000cm2 / V.s, which provides a basis for its ability to manufacture high-frequency electrons. The absorption of light by single-layer graphene is 2.3%, which makes it a kind of optoelectronic device research. important material. However, while graphene has excellent photoelectric properties, it has a very serious defect, that is, the band gap is zero, which limits its application in micro-nano optoelectronic devices. In current experiments, methods such as preparing graphene nanobelts are usually used to open the energy bands of graphene, but the energy band sizes are all...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/192C01B32/184
CPCC01B32/184C01B32/192C01B2204/20C01B2204/22C01B2204/24C01B2204/30
Inventor 方泽波冀婷
Owner SHAOXING UNIVERSITY
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