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Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure

A technology of chemical machinery and manufacturing methods, which is applied in the direction of manufacturing tools, semiconductor/solid-state device manufacturing, grinding/polishing equipment, etc., can solve problems such as process complexity, affecting process reliability, and cost increase, and achieve the goal of improving flatness Effect

Inactive Publication Date: 2008-03-05
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has the problem that it is necessary to add a photolithography and etching process to form a reverse photomask, which makes the process more complicated and the cost increases.
In addition, the shallow trench isolation layer chemical mechanical polishing process often has the problem that the thickness and uniformity of the shallow trench oxide layer are not easy to control, which affects the reliability of the process.

Method used

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  • Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure
  • Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure
  • Combined chemistry mechanical grinding method and manufacturing method of the fleet plough groove isolation structure

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Embodiment Construction

[0030] FIG. 1 is a flow chart of steps of a compound chemical mechanical polishing method according to an embodiment of the present invention.

[0031] Referring to FIG. 1 , firstly, a main polishing step (step 100 ) is performed. The main grinding step is to provide a grinding liquid (slurry), with a grinding speed (V 1 ) to carry out. Wherein, the slurry may for example use a high selectivity slurry (high selectivity slurry, HSS), which for example contains cerium oxide (cerium oxide, CeO 2 )The solution.

[0032] The above-mentioned main grinding step is the same as the general chemical mechanical grinding process. The purpose is to remove most of the materials to be ground in a short time. In order to provide a high grinding rate, once the interface between different materials is exposed, the main The grinding step will stop, but at this time there will still be some material to be ground.

[0033] Please continue to refer to FIG. 1 , after the main polishing step (ste...

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Abstract

The complex chemical and mechanical grinding process includes one main grinding step in the first grinding speed and in the presence of grinding fluid; and one auxiliary grinding step including the first grinding period in the presence of grinding fluid and the second grinding period with solvent added and in the second grinding speed lower than the first grinding speed.

Description

technical field [0001] The invention relates to a chemical mechanical polishing method and a manufacturing method of a semiconductor structure, and in particular to a compound chemical mechanical polishing method and a manufacturing method of a shallow trench isolation structure. Background technique [0002] In the semiconductor process, as the size of the components continues to shrink, the lithography exposure resolution also increases relatively, and with the reduction of the exposure depth of field, the requirements for the level of fluctuations on the wafer surface are more stringent. Therefore, how to maintain a good flatness of the chip during the fabrication process is an important issue. [0003] Currently, the wafer planarization (Planarization) process relies on a chemical mechanical polishing (CMP) process to complete. For the chemical mechanical polishing process, especially the traditional silicon-based (silica based) shallow trench isolation layer chemical m...

Claims

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Application Information

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IPC IPC(8): B24B1/00B24B29/02H01L21/304
Inventor 陈彦竹朱辛堃蔡腾群陈佳禧
Owner UNITED MICROELECTRONICS CORP