Mobile phone antenna medium substrates with anti-symmetric structure left hand material
An asymmetric structure, mobile phone antenna technology, applied in the direction of antenna, electrical components, etc., can solve the problems of complexity, poor directivity, conductor and dielectric loss, etc.
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Embodiment 1
[0014] The left-hand material dielectric substrate 1 is produced by circuit board etching technology, and its specific preparation process is as described in the implementation mode. The left-hand material structural unit used in this embodiment is a metal copper hexagonal opening resonance four-ring and a metal copper wire, wherein the metal copper It can be replaced by metals such as gold, silver, zinc, and tin. On one side of a polytetrafluoroethylene dielectric substrate (ε=2.6) with a thickness of 0.25-1.20mm, etch an open resonant four-ring, and its geometric size is: the diameter of the inscribed circle of the outermost ring D=5.50mm, adjacent Ring spacing d=0.80mm, opening g=0.30mm, line width c=0.50mm, thickness 0.02mm; metal line etched on the other side, its geometric dimensions: line width c=0.50~0.90mm, thickness 0.02mm, The distance between the upper and lower ends of the metal line and the edge of the substrate is 1 = 2.50mm; the row spacing H 0 = 7.00mm, colum...
Embodiment 2
[0016] The left-hand material dielectric substrate 1 is produced by circuit board etching technology, and its specific preparation process is as described in the implementation mode. The left-hand material structural unit used in this embodiment is metal copper hexagonal opening resonant six rings and metal copper wire, wherein the metal copper It can be replaced by metals such as gold, silver, zinc, and tin. On one side of a polytetrafluoroethylene dielectric substrate (ε=2.6) with a thickness of 0.25-1.20mm, etch an open resonant six-ring, and its geometric dimensions are: the diameter of the inscribed circle of the outermost ring is D=5.20mm, adjacent Ring spacing d = 0.40mm, opening g = 0.25mm, line width c = 0.30mm, thickness 0.02mm; the other side etched metal lines, its geometric dimensions: line width c = 0.50 ~ 0.90mm, thickness 0.02mm, The distance between the upper and lower ends of the metal line and the edge of the substrate is 1 = 2.50mm; the row spacing H 0 =6....
Embodiment 3
[0018] The left-hand material dielectric substrate 1 is produced by circuit board etching technology, and its specific preparation process is as described in the implementation mode. The left-hand material structural unit used in this embodiment is metal copper hexagonal opening resonant six rings and metal copper wire, wherein the metal copper It can be replaced by metals such as gold, silver, zinc, and tin. On one side of a polytetrafluoroethylene dielectric substrate (ε=2.6) with a thickness of 0.25-1.20mm, etch an open resonant six-ring, and its geometric size is: the diameter of the inscribed circle of the outermost ring is D=4.85mm, adjacent Ring spacing d = 0.25mm, opening g = 0.10mm, line width c = 0.15mm, thickness 0.02mm; the other side is etched metal line, its geometric dimensions: line width c = 0.50 ~ 0.90mm, thickness 0.02mm, The distance between the upper and lower ends of the metal line and the edge of the substrate is 1 = 2.50mm; the row spacing H 0 =5.70mm,...
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