Cleaning liquid and cleaning method for electronic material
A technology of electronic materials and cleaning fluid, which is applied in the field of cleaning fluid, can solve the problems of poor particle removal ability and insufficient cleaning ability, and achieve the effect of avoiding re-pollution
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Embodiment 1-1
[0048] Sample: The surface of a P-type mirror silicon wafer is cleaned with dilute hydrofluoric acid, then centrifuged and dried to remove the natural oxide coating, and has a hydrophobic surface with a diameter of 200mm. It is spin-coated with a solution containing 10ml of abrasive (by diluting Fujimi Chemical Incorporated's GLANZOX 3900 10 million times the resulting liquid), thus contaminating it with the abrasive. For the amount of particle contamination here, 5000-10000 particles with a diameter of 0.13 μm or larger were adhered. In measuring the number of particles, Surfscan 6220 of KLA-Tencor Corporation was used.
[0049] Raw material liquid: ultrapure water
[0050] Cleaning method: Introduce the cleaning solution into a 40-liter cleaning bath at a rate of 6 liters per minute, thereby allowing it to overflow. A nozzle part of a microbubble generating device (M2-MS / PTFE type produced by Nanoplanet Research Institute Corporation) was provided at the bottom position of...
Embodiment 1-2
[0054] This embodiment is the same as said embodiment, except that the raw material liquid is 1.4ppm hydrogenated water. The hydrogenated water is produced by dissolving hydrogen gas through a gas permeable membrane in ultrapure water that has been degassed through a reduced pressure membrane. During cleaning, the dissolved hydrogen concentration of the cleaning solution is 1.5 ppm.
Embodiment 2-1
[0060] This example is the same as Example 1-1, except that the raw material liquid contains 15mM ammonia water and 30mM hydrogen peroxide.
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