Cleaning liquid and cleaning method for electronic material

A technology of electronic materials and cleaning fluid, which is applied in the field of cleaning fluid, can solve the problems of poor particle removal ability and insufficient cleaning ability, and achieve the effect of avoiding re-pollution

Inactive Publication Date: 2008-07-23
SILTRONIC AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Hydrogenated water compares extremely favorably with APM in terms of chemical solution cost, however, is inferior in particle removal capacity
Hydrogenated water has been put into practical use because its cleaning leve...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0048] Sample: The surface of a P-type mirror silicon wafer is cleaned with dilute hydrofluoric acid, then centrifuged and dried to remove the natural oxide coating, and has a hydrophobic surface with a diameter of 200mm. It is spin-coated with a solution containing 10ml of abrasive (by diluting Fujimi Chemical Incorporated's GLANZOX 3900 10 million times the resulting liquid), thus contaminating it with the abrasive. For the amount of particle contamination here, 5000-10000 particles with a diameter of 0.13 μm or larger were adhered. In measuring the number of particles, Surfscan 6220 of KLA-Tencor Corporation was used.

[0049] Raw material liquid: ultrapure water

[0050] Cleaning method: Introduce the cleaning solution into a 40-liter cleaning bath at a rate of 6 liters per minute, thereby allowing it to overflow. A nozzle part of a microbubble generating device (M2-MS / PTFE type produced by Nanoplanet Research Institute Corporation) was provided at the bottom position of...

Embodiment 1-2

[0054] This embodiment is the same as said embodiment, except that the raw material liquid is 1.4ppm hydrogenated water. The hydrogenated water is produced by dissolving hydrogen gas through a gas permeable membrane in ultrapure water that has been degassed through a reduced pressure membrane. During cleaning, the dissolved hydrogen concentration of the cleaning solution is 1.5 ppm.

Embodiment 2-1

[0060] This example is the same as Example 1-1, except that the raw material liquid contains 15mM ammonia water and 30mM hydrogen peroxide.

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Abstract

A cleaning liquid for an electronic material, in particular, a silicon wafer, uses ultra-pure water or hydrogen water as raw material water, and performs cleaning in combination with ultrasonic irradiation under the presence of hydrogen micro-bubbles. The method enables efficient cleaning and removal of particle components and the like on the wafer surface and prevention of re-contamination.

Description

technical field [0001] The invention relates to a cleaning solution for electronic materials, especially silicon wafers, and a cleaning method using the cleaning solution. Background technique [0002] Recently, in the technique of manufacturing semiconductor LSIs using silicon wafers, the use of silicon wafers having larger diameters, and further microfabrication techniques are required. In addition, problems such as maintenance and improvement of product quality accompanied by process complexity, and reduction of production cost also need to be solved. [0003] In particular, in many fields of technology for manufacturing semiconductor LSIs using silicon wafers, a so-called wet processing step is a key step, which includes processing with various solutions. A particularly important step among the wet processing steps is the washing step. In the conventional cleaning steps, the improvements made are mainly in the selection of the composition of the cleaning solution, the ...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/302H01L21/306B08B3/10B08B3/12
CPCC11D1/00C11D11/0047C11D11/007
Inventor 榛原照男森良弘毛利敬史
Owner SILTRONIC AG
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