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Method for recycling silicon carbide from by-product in silicon slice cutting process

A silicon wafer cutting and by-product technology, applied in the field of silicon carbide recovery, can solve the problem that the by-products of silicon wafer cutting processing cannot be directly reused, and achieve the effect of reducing pollution

Inactive Publication Date: 2008-08-20
JIANGNAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the by-products of silicon wafer cutting processing cannot be directly recycled into the production process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Take 1000g of the sample of silicon chip cutting by-products, put it into a stirred flask, stir evenly, add 250g of separating agent, the mixing temperature is normal temperature or at 50-80°C, the composition of the separating agent is: polyethylene glycol 200 (PEG200) 50g, polyethylene glycol 10000 (PEG10000) 20g, polyethylene glycol monoethyl ether 12g, polyethylene glycol monooleate (DO400) 5g, nonionic surfactant (OP-10) 11g, penetrant (JFC) 8g, after stirring evenly at 5°C, enter the centrifuge to obtain 750g of SiC-rich slurry and 500g of SiC-poor suspension. After secondary centrifugation of the SiC-rich slurry, the SiC-rich slurry and Stir 25% NaOH solution at 50°C for 1 hour, enter the centrifuge, remove most of the liquid, then add 70% sulfuric acid, stir for 1 hour at 50°C, enter the centrifuge, remove most of the liquid, and then rinse with water To neutrality, after mechanical separation, it was dried in an oven at 80°C for 8 hours, and the dried powder wa...

Embodiment 2

[0025] Get the sample 1000g of silicon chip cutting by-product, add the flask with stirring, after stirring evenly, add 350g separating agent, the composition of separating agent is: polyethylene glycol 200 (PEG200) 100g, polyethylene glycol 10000 (PEG10000) 50g , polyethylene glycol monoethyl ether 22g, polyethylene glycol monooleate (DO400) 8g, polyethylene glycol dioleate (MO600) 8g nonionic surfactant (OP-10) 12g, penetrant (JFC ) 8g, after stirring evenly at 80°C, enter the centrifuge to obtain 800g of SiC-rich slurry and 453g of SiC-poor suspension. After secondary centrifugal separation of the SiC-rich slurry, the SiC-rich slurry Stir with 30% NaOH solution at 50°C for 1 hour, enter the centrifuge, remove most of the liquid, then add 60% sulfuric acid and stir for 1 hour at 50°C, enter the centrifuge, remove most of the liquid, and then use Rinse with clean water until neutral, after mechanical separation, dry in an oven at 80°C for 8 hours, and obtain the product by si...

Embodiment 3

[0027]Get the sample 1000g of silicon chip cutting by-product, add the flask with stirring, after stirring evenly, add 200g separating agent, the composition of separating agent is: polyethylene glycol 400 (PEG400) 50g, polyethylene glycol 800 (PEG800) 20g , polyethylene glycol monoethyl ether 12g, polyethylene glycol monooleate (DO400) 5g, polyethylene glycol dioleate (MO600) 5g nonionic surfactant (OP-10) 8g, penetrant (JFC ) 8g, viscosity modifier 5g, after stirring evenly at 40°C, enter the centrifuge to obtain 813g of SiC-rich slurry and 528g of SiC-poor suspension, after secondary centrifugation of the SiC-rich slurry, rich Silicon carbide slurry is stirred with 30% NaOH solution at 50°C for 1 hour, enters the centrifuge, removes most of the liquid, then adds 60% nitric acid and stirs for 1 hour at 50°C, enters the centrifuge, removes most of the liquid , then rinsed with clean water until neutral, after mechanical separation, dried in an oven at 80°C for 8 hours, the dr...

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Abstract

The invention relates to a method of recovering silicon carbide from the byproducts of the cut processing of solar-grade silicon wafer and electronic-grade wafer. Concretely speaking, in the wafer cut processing, a large amount of slurry cutting liquid is required to be added to reduce mechanical stress and heat stress and make linear cutting process a stable process; thus, a large amount of byproducts comprising a great amount of organic compounds, silicon carbide and polysilicon (moncrystalline silicon) are made; the silicon carbide powder used for the cutting processing of silicon wafer can be recovered from the byproducts. According to the technical proposal provided by the invention, after separation agent is added into silicon wafer cutting byproducts, the sizing agent rich in silicon carbide can be got after mechanical separation; after second mechanical separation, the wet solid, after the processes of alkali cleaning, pickling, rinsing, mechanical separation, drying and size classification, can get the silicon carbide powder which can be used for the cutting processing of silicon wafer.

Description

technical field [0001] The invention relates to a method for recovering silicon carbide from by-products of silicon wafer cutting. The application fields are mainly the by-products of silicon wafer cutting and processing in the solar energy industry and the by-products of silicon wafer cutting and processing in the electronics industry. Recycled high-purity silicon carbide can be reused for cutting and processing of silicon wafers, and can also be used in other places where commercial silicon carbide is applicable. Background technique [0002] In order to reduce the mechanical stress and thermal stress during the silicon wafer cutting process and ensure the wire cutting process becomes a stable process, it is necessary to add a large amount of cutting fluid, which will produce a large number of by-products during the processing. The main component of this by-product is a large amount of organic matter (that is, the main component of the cutting fluid: a mixture of ethylene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 孙余凭刘来宝仲其成
Owner JIANGNAN UNIV
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