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Conductive composition film, electron injection electrode, and organic electroluminescence element

An electroluminescent element and electron injection technology, applied in electroluminescent light sources, electrical components, organic semiconductor devices, etc., can solve the problems of large difference in work function and high driving voltage, and achieve the effect of small work function

Inactive Publication Date: 2008-08-27
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Moreover, it is also considered to form a transparent conductive oxide such as ITO in contact with the organic layer as the cathode, but in the organic layer including the light emitting layer and the transparent conductive oxide such as ITO, because the difference in work function is large, there is a problem in the device. Risk of high driving voltage

Method used

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  • Conductive composition film, electron injection electrode, and organic electroluminescence element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] (1) Film formation of conductive composition film

[0084] Prepare a four-inch IZO target (In 2 o 3 : ZnO=89.3:10.7wt% (manufactured by Furuuchi Chemical Co., Ltd.), and filled in a sputtering apparatus. Place 100 In metal wires (φ1mm×10mm) on the target and degas to 2×10 -4 After Pa, at sputtering pressure 0.1Pa, argon 100%, sputtering output 0.1W / cm 2 1. A film was formed on glass under the conditions of a sputtering time of 30 seconds.

[0085] The conductive composition film thus obtained had a film thickness of 10 nm and a specific resistance of 2×10 -3 Ω·cm, the visible light transmittance is 80%.

[0086] In addition, the visible light transmittance was measured with UV-3100 of Shimadzu Corporation.

[0087] In addition, when the work function of this film was measured with AC-1 (Riken Keiki), it was 4.2 eV. In addition, the elemental ratio of In, Zn, and O in the film was measured with a secondary ion mass spectrometer (SIMS), and found to be In:Zn:O=55:1...

Embodiment 2

[0099] (1) Film formation of conductive composition film

[0100] Prepare a four-inch ITO target (In 2 o 3 : SnO=90:10wt% (manufactured by Furuuchi Chemical Co., Ltd.), and filled in a sputtering apparatus. Place 100 Sn metal wires (φ1mm×10mm) on the target and degas to 2×10 -4 After Pa, at sputtering pressure 0.1Pa, argon 100%, sputtering output 0.1W / cm 2 1. A film was formed on glass under the conditions of a sputtering time of 30 seconds.

[0101] The conductive film has a film thickness of 10nm and a specific resistance of 2×10 -3 Ω·cm. When the work function of IZO thus obtained was measured by AC-1 (Riken Keiki), it was 4.1 eV. When the light transmittance was measured, it was 60%. In addition, the ratio of In, Sn, and O was measured by SIMS to be 55:15:30 (atomic %).

[0102] (2) Production of organic EL elements

[0103] An organic EL element was obtained in the same manner as in Example 1, except that an ITO target with 100 Sn metal wires placed in the second...

Embodiment 3～ Embodiment 13

[0107] Except having used the target and metal wire shown in Table 1, it carried out similarly to Example 1 or 2, and formed a film of the electroconductive composition. In addition, an organic EL element was fabricated and evaluated in the same manner as in Example 1 or 2, except that an electron injection electrode layer composed of the conductive composition film was formed. Furthermore, the IO target of Example 13 is a target made of indium oxide.

[0108] Table 1 shows the measurement results of light transmittance, work function of the conductive composition film, current density and luminance of the organic EL device.

[0109] [Table 1]

[0110] target

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Abstract

Disclosed are a conductive composition film, an electron injection electrode, and an organic electroluminescence element (abbreviated an ''EL element'', hereinafter). Display devices have been intensively developed using an EL element, and an electron injection electrode (14) for an EL element is required to have a low resistance and a high transparency. An ITO or the like has been proposed as a conductive composition film that meets with the requirement. However, an ITO has such a disadvantage that it has a large difference in work function from a light-emitting layer (13). The disadvantage can be overcome by providing a conductive composition film comprising the elements (A) and (B) below and an oxygen element, wherein the sum total of the amount of the element (A) (x) and the amount of the element (B) (y) (x+y) comprises 41 to 80 at% exclusive of the film, and the amount of the oxygen element comprises [(100-(x+y)) at% of the film, or the like: (A) an element selected from In, Sn and Zn; and (B) at least one element selected from In, Sn, Zn, V, W, Ni, Pd, Pt, Cu, Ag and Au which is different from the element (A).

Description

technical field [0001] The invention relates to a conductive composition film, an electron injection electrode and an organic electroluminescence element. Background technique [0002] Organic electroluminescent elements (hereinafter, electroluminescent elements are referred to as EL.) are completely solid elements and self-luminous elements, so they have excellent characteristics such as wide viewing angle and easy handling, so the development of display devices using EL elements is very popular. [0003] There are bottom emission (bottom emission) and top emission (top emission) structures in a display device using an EL element. In the case where a thin-film transistor (TFT) is formed on a substrate to drive an image composed of an EL element, in a top emission structure, light is extracted from the opposite side of the substrate on which the TFT is formed, and there is no interruption by the TFT. The opening ratio of the part is improved. [0004] In order to efficient...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/08H05B33/28H01L51/50
CPCH01L2251/5315H01B1/08H01L51/5265H01L51/5234H10K50/828H10K2102/3026H10K2102/103H01L31/022475H10K50/171H10K50/852
Inventor 笘井重和梅野聪
Owner IDEMITSU KOSAN CO LTD