Production method of LED

Abstract

The invention provides a manufacturing method for an LED, which uses a soft and transparent bonding layer to joint a transparent parent metal with an epitaxial structure of the LED that is fabricated at the parent metal, and then removes the parent metal for transferring the epitaxial structure of the LED onto the transparent parent metal; afterwards the epitaxial structure of the LED is processed by mesa etching to lead the epitaxial structure of the LED to form a first upper surface and a second upper surface and simultaneously reveal an n-type semiconductor layer and a p-type semiconductorlayer, and then a metal reflecting layer and a barrier layer are formed at the epitaxial structure of the LED; and at last the electrodes are fabricated at the barrier layer.

Description

[0001] This application is a divisional application of the following applications, [0002] Application date of the original application: March 1, 2005, [0003] The application number of the original application: 2005100529590, [0004] The title of the invention of the original application: flip-chip light-emitting diode and its manufacturing method. Technical field [0005] The invention relates to a method for manufacturing a light emitting diode, and in particular to a method for manufacturing a flip-chip light emitting diode that can increase the light output intensity. Background technique [0006] Light Emitting Diode (LED) has the advantages of low production cost, simple structure, low power consumption, small size and easy installation, and is widely used in lighting source and display technology. [0007] Generally, traditional light-emitting diodes directly fabricate the epitaxial structure of the light-emitting diode on the substrate, and fabricate the cathode electrode an...

AI Technical Summary

Problems solved by technology

[0009] However, due to the light emission of the flip-chip LED, when it is output upward, it will be absorbed by the upper substrate, and cannot penetrate the substrate, and then output to the outside of the LED.

Therefore, although the flip-chip LED has the advantages of packaging, it actually leads to a decrease in the light output intensity of the flip-chip LED.

[0010] In addition, because the improvement of the brightness of the LED is always the main development trend of the LED technology at present, but generally except for the part where the LED emits light directly upward, the light emitted from other directions will be partially absorbed by the material below the LED. It cannot be effectively used as a source of light output, especially the light emitting diode of the flip-chip type. The part emitted to the bottom of the light emitting diode is very easy to be blocked by electrodes or scattered.

Therefore, the light output intensity of the light-emitting diode mainly depends on the light-emitting characteristics of the light-emitting diode itself, so that the improvement of the light output intensity of the light-emitting diode is limited.

Images