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Plasma processing method and device

A processing method and technology of a processing device, which are applied in the field of ion processing, can solve problems such as application difficulties, and achieve the effects of reducing damage and reducing usage.

Inactive Publication Date: 2008-09-24
大见忠弘
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, Kr gas and Xe gas are less abundant in nature and more expensive than Ar gas generally used in plasma treatment, making it difficult to apply them in industry.

Method used

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Examples

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no. 1 Embodiment

[0046] In the first embodiment of the present invention, a mode in which the plasma treatment is the direct oxidation / nitridation treatment of silicon will be described.

[0047] FIG. 1 is a cross-sectional view of a microwave-excited plasma processing apparatus. FIG. 2 is a graph showing the relationship between electron energy and total ionization cross-sectional area. Fig. 3 is a cross-sectional view showing a plasma measurement method. Figure 4 is a graph showing the luminous intensity of Ar / Xe mixed plasma, respectively (a) represents Xe + (466.8nm) relative intensity of 2.66Pa (20mTorr), (b) represents Xe + (466.8nm) relative intensity of 5.33Pa (40mTorr), (c) represents the relative intensity of 2.66Pa (20mTorr) of Ar (750.4nm), (d) represents the relative intensity of Ar (750.4nm) of 5.33Pa (40mTorr) strength. In addition, Fig. 5 is a graph showing the plasma electron density, (a) shows the Ar operating pressure (mTorr = × 0.133Pa) and the number of electrons (10 ...

no. 2 Embodiment

[0060] Next, an example in which the plasma treatment of the present invention is applied to film formation will be shown. In the second embodiment, SiO is formed by CVD (Chemical Vapor Deposition) 2 film formation.

[0061] Fig. 8 is a schematic cross-sectional view of a microwave-excited plasma processing apparatus for secondary shower plates used in a second embodiment of the present invention. The structure of the apparatus in FIG. 8 is that a lower shower plate 22 is arranged in the diffusion plasma region of the microwave-excited plasma processing apparatus shown in FIG. 1 . Kr (or Xe), Ar, and O for plasma excitation are introduced from the upper shower plate 21 2 gas. SiH, which is a reactive gas for film formation, is introduced from the lower shower plate 22 4 gas. High-density plasma is excited in the space between the upper-stage shower plate 21 and the lower-stage shower plate 22, and the plasma diffuses to the silicon wafer 4 from the gap of the lattice-shap...

no. 3 Embodiment

[0067] Next, an example of the case where the plasma treatment of the present invention is applied to etching treatment will be described. Referring to FIG. 8 , Kr (or Xe) and Ar gases for plasma excitation are introduced from the upper shower plate 21 . Introduce reactive gas, namely C, from the lower shower plate 22 x f y gas. Here, a bias voltage (RF) 25 is applied to the substrate 4, thereby applying a negative DC bias voltage to the side of the silicon wafer 4, and the SiO on the silicon substrate 4 2is etched. In addition, a white arrow 17 indicated by reference numeral 17 indicates a microwave used for plasma excitation, and reference numeral 26 indicates a high-density plasma region.

[0068] At this time, as shown in Fig. 2, Fig. 6 and Fig. 7, since the temperature of Kr and Xe gases is lower than that of Ar electrons, the cross-sectional area of ​​collision with electrons is small, and the ionization energy is also small. The mixed gas of Kr (or Xe) is irradiate...

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Abstract

A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.

Description

technical field [0001] The present invention relates to a method for performing plasma treatment on a substrate of an electronic device such as a semiconductor element, a substrate on which a semiconductor chip is mounted, a wiring substrate, a flat-panel display device substrate, or an object to be processed, a processing device thereof, and a method for manufacturing electronic devices using the plasma treatment. Manufacturing method. Background technique [0002] In the past, plasma was used to oxidize, nitride, and oxynitride the surface of the object to be treated, such as silicon semiconductor, or to form an oxide film, nitride film, oxynitride film, polysilicon film, or organic EL film on the surface of the object to be processed. etc., or in the plasma treatment when etching the surface to be treated, a single rare gas is used to generate plasma. Krypton (Kr) gas and xenon (Xe) gas, which have a large collision cross-sectional area with electrons and a low plasma el...

Claims

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Application Information

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IPC IPC(8): H05H1/46H05H1/00
Inventor 大见忠弘寺本章伸
Owner 大见忠弘