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Method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increasing LDD junction depth, complex process, etc., achieve high process stability, simple manufacturing process, and save thermal budget Effect

Inactive Publication Date: 2008-10-08
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0004] In the inventive method disclosed in the above-mentioned Chinese patent application documents, the LDD diffusion area is formed by a two-step ion implantation process of arsenic ion implantation with a larger atomic weight and phosphorus ion implantation with a smaller atomic weight, and the diffusion of phosphorus ions is increased by the assistance of arsenic ions. Increase the junction depth of LDD to reduce the HCI effect. However, this method introduces two ion implantation processes to reduce HCI, and the process is more complicated.

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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Embodiment Construction

[0040] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0041] With the development of semiconductor manufacturing technology to 90nm or even smaller technology nodes, the gate size of metal oxide semiconductor devices is getting smaller and smaller. Correspondingly, the thickness of the gate dielectric layer decreases as the size of the gate decreases. Due to the thinning of the gate dielectric layer, when manufacturing the shallow junction LDD diffusion region, in order to avoid the breakdown of the gate dielectric layer during LDD implantation, the energy of ion implantation is correspondingly reduced; on the other hand, in order to suppress the metal oxidation The TED effect in the manufacturing process of physical semiconductor devices, the thermal budget of annealing after doping in the LDD process is also correspondingly reduced. This results in a relatively shallow LDD diffusion region...

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Abstract

A method for preparing a semiconductor device includes: providing a semiconductor substrate with an input and / or output NMOS device grid; injecting light doping drain electrode to the semiconductor substrate at two sides of the grid; and oxidizing the grid. The method of the present invention can reduce heat current carrier injection effect of the input and / or output NMOS device and prolong life time of the input and / or output NMOS device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing an input and / or output N type Metal-Oxide-Semiconductor (I / O NMOS). Background technique [0002] The hot carrier injection (Hot Carrier-Injection, HCI) effect is due to the excessive electric field strength on the side near the drain in the conductive channel of the metal oxide semiconductor device, causing the carriers in the conductive channel to be injected into the gate dielectric layer. Phenomenon. The HCI effect will cause the carrier mobility of metal oxide semiconductor devices to decrease, and the threshold voltage will increase, which will lead to excessive aging of metal oxide semiconductor devices, which is one of the important parameters affecting the performance of NMOS devices. Especially for I / O NMOS devices, since the operating voltage is higher than that of core (Core) metal oxide semiconductor devices, the HCI ph...

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Application Information

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IPC IPC(8): H01L21/336H01L21/8234
Inventor 林丽娟
Owner SEMICON MFG INT (SHANGHAI) CORP
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