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Cleaning agent for grinding wafer

A cleaning agent and wafer technology, applied in detergent compounding agent, detergent composition, organic cleaning composition, etc., can solve the problem that the RCA cleaning method cannot meet the grinding and cleaning requirements of 300mm wafers, consumes a large amount of chemical reagents, and cleans The problem of high cost can reduce the corrosion rate of the wafer, improve the cleaning ability, and reduce the cleaning cost.

Inactive Publication Date: 2008-10-22
DALIAN SANDAAOKE CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current cleaning method is basically the RCA cleaning method proposed by Kern and Puotinen. The cleaning method involves complex processes, many operating steps, and needs to be carried out at a relatively high temperature, resulting in high cleaning costs; and requires Consumption of a large amount of chemical reagents such as acids, alkalis, and oxidants has seriously polluted the environment; in addition, the RCA cleaning method can no longer meet the cleaning requirements of 300mm wafer grinding

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A cleaning agent for wafer grinding is characterized in that it is composed of a surfactant, a fluorine-containing carboxylic acid, a fluoride salt, a pH regulator, a penetrating agent, a chelating agent, and pure water.

[0034] Its raw materials and weight percent are as follows:

[0035] Surfactant 5%-20%, fluorine-containing carboxylic acid 0.1%-10%, fluoride salt 0.01-5%, pH regulator 5%-20%, penetrant 2%-5%, chelating agent 0.1%-2 %, the balance of pure water.

[0036] Each raw material is selected within its weight range, and the total weight is 100%.

[0037] Described surfactant is fatty alcohol polyoxyethylene ether (AEO), and general molecular formula is respectively R 1 O(C 2 h 4 O) m , where R 1 It is an alkyl group of C10-C18, m: the polymerization number of ethylene oxide group, and the polymerization number is 3-20.

[0038] The fluorine-containing carboxylic acid is C 6 f 13 COOH, C 8 f 17 COOH, C 9 f 19 COOH, C 11 f 23 At least one of CO...

Embodiment 2

[0054] Raw materials and weight percentages are as follows:

[0055] AEO-15 10%

[0056] Perfluorohexanoic acid 3%

[0057] Ammonium Fluoride 0.5%

[0058] Triethanolamine 10%

[0059] JFC Penetrant 3%

[0060] Chelating agent 0.5%

[0061] Pure water balance.

[0062] The sum of the weight percentages of each raw material is 100%, and the cleaning method and effect are the same as in Example 1.

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Abstract

The invention discloses a cleaning agent for wafer grinding, which is simple in preparation method and low in cost, does not pollute the environment and can meet the grinding and cleaning requirements of a wafer with a diameter of 300 millimeters. The compositions by weight percentage of raw materials are: 5 to 20 percent of surface active agent, 0.1 to 10 percent of fluorine-containing carboxylic acids, 0.01 to 5 percent of fluoride salt, 5 to 20 percent of pH regulator, 2 to 5 percent of osmotic agent, 0.1 to 2 percent of chelon, the balance being pure water.

Description

Technical field: [0001] The invention relates to a cleaning agent for a wafer grinding process, in particular to a cleaning agent for wafer grinding which has a simple preparation method, low cost, no pollution to the environment and can meet the grinding and cleaning requirements of a wafer with a diameter of 300 mm. Background technique: [0002] Wafers are one of the most widely used materials in semiconductors and integrated circuits. With the continuous development of ultra-large-scale integrated circuits, the line width of integrated circuits continues to decrease, while the diameter of wafers continues to increase, especially wafers with a diameter of 300mm will become the mainstream of ultra-large-scale integrated circuits. Quality requirements are also getting higher and higher. Since the surface state and cleanliness of the wafer are one of the most important factors affecting the quality and reliability of the device, in the wafer manufacturing process, the wafer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/66C11D3/30H01L21/302C11D3/24
Inventor 侯军吕冬
Owner DALIAN SANDAAOKE CHEM
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