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Technological process for transferring film by means of sacrificial layer

A technology of film transfer and process method, which is applied in the process of producing decorative surface effects, metal material coating process, coating and other directions, can solve the problem of incomplete compatibility between heat-sensitive film and micro-bridge structure process, and achieve a It is beneficial to large-scale production and the method is simple and easy to implement.

Inactive Publication Date: 2008-11-05
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a simple, fast and effective method of film transfer using a sacrificial layer to transfer a large-scale microbridge array to the readout circuit, to solve the problem of heat-sensitive thin film and microbridge structure technology and CMOS technology Not fully compatible technical issues

Method used

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  • Technological process for transferring film by means of sacrificial layer

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Embodiment Construction

[0016] In this embodiment, the substrate 1 of the microbridge array is made of bonding glass, the sacrificial layer 2 is made of polyimide, and the interconnection pillar 4 is made of indium pillar.

[0017] The following are the concrete steps of utilizing the film transfer of the present invention:

[0018] (1) Spin-coat polyimide (thickness 5 μm) on the bonded glass substrate as a sacrificial layer, imidize (400° C., 1 hour, nitrogen protection), and prepare a microbridge array on it.

[0019] (2) On the microbridge array and the readout circuit, indium pillars (10 μm in diameter and 10 μm in height) were prepared by lift-off process, and the substrate of the microbridge array was flipped over to align with the readout circuit and interconnected.

[0020] (3) Oxygen plasma is used to ash the polyimide (segmented etching, substrate temperature control, about two hours in total), so that the glass substrate is directly separated.

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Abstract

The invention discloses a technique method for transferring a film by utilizing a sacrificial layer. The specific technique method comprises the following steps: a sacrificial layer is firstly coated on the substrate of a microbridge array, then the microbridge array is prepared on the sacrificial layer, after that, a reading circuit and the microbridge array are reversed and inter-connected, finally, the sacrificial layer is removed and the substrate of the microbridge array is separated automatically. The method can avoid the chip protection and end point monitoring problem during the process of removing the substrate of the microbridge array, and can realize the large-scale transfer of the microbridge array in a rapid and efficient way.

Description

technical field [0001] The invention belongs to the technical field of microfabrication of detectors, and specifically refers to a process method for film transfer using a sacrificial layer. It is suitable for making hybrid large-scale uncooled focal plane arrays, and is also suitable for all applications that require large-scale overhead film arrays. device. Background technique [0002] The uncooled focal plane is essentially a "thermal" detector, which uses the "radiant heat effect" of the sensitive element for infrared detection. Its core is an infrared sensitive element array with a certain heat accumulation ability and thermal effect. [0003] The uncooled focal planes of microbolometers developed by major foreign R&D institutions and companies generally use CMOS readout circuits, vanadium oxide or polysilicon as heat-sensitive films, and technical solutions for monolithic integration of focal plane microbridge arrays and CMOS readout circuits. . However, the process...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 程正喜马斌翟厚明施永明张学敏
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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