Material construction for enhancing optical property and temperature stability of self-organizing quantum point

A technology of self-organized quantum dots and optical properties, applied in lasers, phonon exciters, laser parts, etc., can solve the problems of limited effect of temperature stability of optical properties, decreased temperature stability, etc., and achieve temperature stability of optical properties The effect of good sex and good luminous quality

Inactive Publication Date: 2008-11-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The disadvantage of this structure is that the effect of improving the temperature stability of optical properties by increasing the barrier height is limit

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  • Material construction for enhancing optical property and temperature stability of self-organizing quantum point
  • Material construction for enhancing optical property and temperature stability of self-organizing quantum point

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[0023] Please refer to figure 1 , The present invention relates to a self-organized quantum dot material structure, which includes:

[0024] A substrate 6, the material of the substrate 6 is gallium arsenide;

[0025] A buffer layer 1, the buffer layer 1 is made on the substrate 6. The buffer layer 1 is used to shield defects from the substrate 6 and level the growth plane. The thickness of the buffer layer 1 is 100 nanometers, and the buffer layer 1 The material is gallium arsenide;

[0026] A quantum well layer 2 is fabricated on the buffer layer 1. Since the lattice constant of the quantum well layer 2 is larger than the barrier layer 3 above it, stress relaxation can occur when the barrier layer 3 grows, And this stress relaxation is introduced into the quantum dot layer 4, causing the quantum dot layer 4 to start to form dots when the thickness of the indium arsenide wetting layer is small. Therefore, the carriers that originally used the wetting layer as the intermediate ch...

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Abstract

Disclosed is a material structure which is capable of improving optical temperature stability of self-organized quantum dots. The material structure comprises a substrate; a cushioning layer is arranged on the substrate to conceal the defect of the substrate so as to make the growth surface plane; a quantum well layer is arranged on the cushioning layer to generate stress relaxation during the growth and guides the stress relaxation to the quantum dot layer above so as to reduce the thickness of the wetting layer; a barrier layer is arranged on the quantum dot layer and is capable of restricting the current carrier in the quantum dot layer to avoid the weakening of optical temperature stability of the quantum dot material caused by thermally excited transition; a quantum dot layer is arranged on the barrier layer and generates electron hole pairs and radiates composite light when being excited; a cover layer is arranged on the quantum dot layer and is used to change the optical property of the quantum dots and to increase the level spacing between the ground state and the excited state.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a material structure for improving the temperature stability of the optical properties of self-organized quantum dots. Background technique [0002] Self-organized quantum dots show attractive application prospects in optoelectronic devices, such as lasers, detectors, and optical storage. Theoretical prediction: Compared with semiconductor quantum well lasers, semiconductor lasers using quantum dots as active regions will have extremely low threshold current, high characteristic temperature, high differential gain and extremely narrow spectral linewidth. However, so far, the operating properties of semiconductor quantum dot lasers at room temperature are far from the level expected by theory. The temperature stability of quantum dot optical properties is crucial to realize the room temperature operation of quantum dot lasers. In order to make quantum dot material...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01S5/343H01L33/02H01L33/14
Inventor 金灿金鹏王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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