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Sputtering target and method for manufacturing oxide sintered body

A manufacturing method and oxide technology, which are applied in sputtering plating, ion implantation plating, coating and other directions to achieve the effects of easy crystallization, low resistance and high transmittance

Active Publication Date: 2008-12-03
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Sputtering target and method for manufacturing oxide sintered body
  • Sputtering target and method for manufacturing oxide sintered body
  • Sputtering target and method for manufacturing oxide sintered body

Examples

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manufacture example 1

[0104] Prepare In with a purity >99.99% 2 o 3 Powder, SnO 2 Powder and BaCO with a purity >99.9% 3 pink.

[0105] First, with BET=27m 2 / g In 2 o 3 Powder 58.5wt% and BET=1.3m 2 / g BaCO 3 The ratio of powder 41.4wt% prepares a total amount of 200g, mixes it with a ball mill in a dry state, and bakes it at 1100°C for 3 hours in the atmosphere to obtain BaIn 2 o 4 pink.

[0106] Then, with the above BaIn 2 o 4 Powder 5.5wt%, BET=15m 2 / g In 2 o 3 Powder 84.7wt% and BET=1.5m 2 / g of SnO 2 A powder ratio of 9.8 wt% was prepared in a total amount of about 1.0 kg (about 0.02 mol for Ba and about 0.10 mol for Sn to 1 mol of In) and mixed with a ball mill. Thereafter, a PVA aqueous solution was added as a binder, mixed, dried, and cold-pressed to obtain a molded body. The molded body was degreased at 600°C in air at a rate of 60°C / h for 10 hours, and then fired at 1600°C for 8 hours in an oxygen atmosphere to obtain a sintered body. Specifically, the firing conditio...

manufacture example 2

[0108] In addition to BaIn 2 o 4 Powder 2.5wt%, BET=15m 2 / g In 2 o 3 Powder 83.6wt% and BET=1.5m 2 / g of SnO 2 The target was prepared in the same manner as in Production Example 1 except that the ratio of the powder was 13.9 wt% (Ba corresponds to about 0.01 mol and Sn corresponds to about 0.15 mol to 1 mol of In). The target was also formed in the same manner. In addition, the density of the target is 6.74g / cm 3 , the volume resistivity is 2.92×10 -3 Ωcm.

manufacture example 3

[0110] In addition to BaIn 2 o 4 Powder 25.4wt%, BET=4.7m 2 / g In 2 o 3 Powder 65.5wt% and BET=1.5m 2 / g of SnO 2 The target was prepared in the same manner as in Production Example 1 except that the ratio of the powder was 9.1 wt% (Ba corresponds to about 0.10 mol and Sn corresponds to about 0.10 mol to 1 mol of In). In addition, the density of the target is 6.81g / cm 3 , the volume resistivity is 5.62×10 -4 Ωcm.

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Abstract

Provided is a sputtering target for forming a transparent conductive film, which has low resistivity and excellent transparency, can be relatively easily patterned in amorphous state by weak acid etching and relatively easily crystallized. A method for manufacturing an oxide sintered body is also provided. The sputtering target is provided for forming the amorphous-state transparent conductive film. The sputtering target is provided with the oxide sintered body containing indium oxide, tin, if needed, and barium.

Description

technical field [0001] The present invention relates to a method for producing a sputtering target and an oxide sintered body for forming a transparent conductive film, which is an amorphous film, can be easily patterned by etching with a weak acid, and has low resistance and transmittance. High and easily crystallized. Background technique [0002] Since indium oxide-tin oxide (In 2 o 3 -SnO 2 The composite oxide, hereinafter referred to as "ITO") film has high visible light transmittance and high conductivity, so it is widely used as a transparent conductive film for liquid crystal display devices, heat-generating films for preventing glass condensation, infrared reflective films, etc. However, there is a problem that it is difficult to form an amorphous film. [0003] On the other hand, an indium oxide-zinc oxide (IZO) transparent conductive film is known as an amorphous film, but this film is inferior in transparency to an ITO film and has a problem of yellowing. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/00
CPCC04B2235/5409C04B35/457C23C14/086C04B2235/3293C04B2235/3215C23C14/3414C04B2235/6567C04B2235/3286C04B2235/80C04B2235/77C04B35/638C04B2235/6565C04B2235/6562C04B35/01C04B35/62685
Inventor 高桥诚一郎宫下德彦
Owner MITSUI MINING & SMELTING CO LTD