Display

A technology for display devices and protective films, which is applied to lighting devices, light sources, electrical components, etc., can solve the problems of increased manufacturing costs, increased driving electric power, low side wall step coverage, etc., to prevent the appearance of dark spots, good Effect of sealing characteristics and preventing characteristic degradation

Inactive Publication Date: 2008-12-17
SONY CORP
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such high-density silicon nitride films have low sidewall step coverage and cause dark spots, thus resulting in defective products
In addition, because the deposition rate is low, the manufacturing cost increases
[0007] In addition, when the deposition rate is set to a high value, the sealing property of the silicon nitride film becomes weak resulting in a shortened light emitting lifetime of the device, a decrease in chromaticity and an increase in driving electric power
In addition, there is a problem in which impurities of 50nm to 300nm adhere to the surface of the film, so the quality stability of the protective film cannot be maintained

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Display
  • Display
  • Display

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0073] In Example 1, the formation has figure 2 The configuration shown is the display device 1 . In this example, the high-density silicon nitride film 4a formed under condition 2 of the comparative example, the low-density silicon nitride film 4b formed under condition 3, and the high-density silicon nitride film formed under condition 2 were laminated in the following order. Density of the silicon nitride film 4c to provide the protective film 4. To form protective film 4, silicon nitride films 4a, 4b, and 4c are successively deposited by the plasma CVD method.

[0074] Figure 12 The results of lifetime measurement of the organic electroluminescent device 3 in the display device 1 formed in Example 1 are shown. Figure 12 The lifetimes measured for samples 1 and 4 of the comparative example are also shown.

[0075] Such as Figure 12 As shown, it was confirmed that the display device 1 of Example 1 had a good lifetime which was equivalent to that of the sample 1 usin...

example 2

[0081] In Example 2, the formation has image 3 The configuration shown is a display device 1'. In this example, epoxy resin 5 was applied to the entire surface of protective film 4 of the display device formed in Example 1, and a glass substrate (sealing substrate) 6 was bonded with epoxy resin 5 serving as an adhesive.

[0082] The above-formed display device 1' of Example 2 was exposed to a high-temperature and high-humidity environment with a temperature of 80°C and a humidity of 75%. The test results showed that no moisture permeability between the substrate 2 and the glass substrate 6 was observed. The same test results on the display device 1 of Example 1 showed that in a portion of 2 mm or more of silicon nitride (in the protective film 4 ) within the edge of the substrate 2 , moisture-permeable marks were observed. It was thus confirmed that the moisture permeability in the display device can be suppressed by bonding the sealing substrate 6 with the resin 5 .

example 3

[0084] In Example 3, the formation has figure 2 The configuration shown is the display device 1 . In this example, the high-density silicon nitride film 4a formed under condition 2 of the comparative example, the low-density silicon nitride film 4b formed under condition 3, and the silicon nitride film formed under condition 1 were laminated in the following order. A high-density silicon nitride film 4c is used to provide the protective film 4. That is, the films under Condition 2 / Condition 3 / Condition 1 were deposited in order from the lower layer side. In order to form protective film 4, silicon nitride films 4a, 4b, and 4c are successively deposited by the plasma CVD method.

[0085] The display device 1 of Example 3 formed above was exposed to a high-temperature and high-humidity environment with a temperature of 80° C. and a humidity of 75%. The test results showed that the silicon nitride (in the protective film 4 ) within the edge of the substrate 2 ) of 2 mm or mor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a display wherein a light-emitting device can be protected by a protective film having good sealing characteristics and sidewall step coverage. Consequently, the display is prevented from deterioration of the light-emitting device, thereby maintaining good display characteristics. Specifically disclosed is a display (1) wherein an organic electroluminescent device (3) formed on a substrate (2) is covered with a protective film (4). This display (1) is characterized in that the protective film (4) is composed of silicon nitride films (4a, 4b, 4c) formed in layers by a chemical vapor deposition method using an ammonia gas, and the surface layer of the protective film (4) is composed of a high-density silicon nitride film (4c) and a low-density silicon nitride film (4b) having a lower density than the high-density silicon nitride film (4c) is arranged below the surface layer.

Description

technical field [0001] The present invention relates to a display device, and more particularly, to a display device including an organic electroluminescence device covered by a protective film. Background technique [0002] As a light-emitting device capable of realizing high-luminance light emission by low-voltage DC driving, an organic electroluminescence device including an organic layer provided between an anode and a cathode and in which Organic hole transport layer and organic emissive layer. However, organic electroluminescent devices have problems of decreased stability over time, such as decreased luminance and unstable light emission due to moisture absorption. Therefore, in a display device using an organic electroluminescent device, the organic electroluminescent device is covered with a protective film to prevent moisture from reaching the organic electroluminescent device. [0003] As such a protective film, an organic material film such as a silicon nitride...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H05B33/04H01L51/50
Inventor 今井利明安部薰久保田绅治森川慎一郎西村贞一郎
Owner SONY CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap