Method for removing photoresist and method for manufacturing mosaic structure

A technology of damascene structure and photoresist, which is applied in the field of photoresist removal and manufacturing of damascene structure, can solve the problems such as the decrease of the breakdown resistance of the second dielectric layer 104, the damage of the second dielectric layer 104, and the influence on the electrical properties of the semiconductor device. , to achieve the effect of reducing the number of handling, reducing bombardment and reducing damage

Inactive Publication Date: 2008-12-24
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

However, the oxygen plasma bombardment in the oxygen plasma ashing process will cause relatively large damage to the second dielectric layer 104, and make the profile of the side wall of the connection hole 108a and / or the side wall of the trench 114a worse; and Decrease the breakdown resistance of the second dielectric layer 104, affecting the electrical properties of semiconductor devices formed

Method used

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  • Method for removing photoresist and method for manufacturing mosaic structure
  • Method for removing photoresist and method for manufacturing mosaic structure
  • Method for removing photoresist and method for manufacturing mosaic structure

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Embodiment Construction

[0040] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0041] Image 6 It is the flow chart of the embodiment of the photoresist removal method of the present invention, Figure 7 to Figure 9 It is a schematic cross-sectional view of the structures corresponding to each step of the embodiment of the photoresist removal method of the present invention.

[0042] Such as Image 6 As shown, step S100, providing a semiconductor structure with a photoresist layer;

[0043] Such as Figure 7 The cross-sectional schematic diagram shown provides a semiconductor structure 10, the semiconductor structure 10 includes a semiconductor substrate 11, a material layer 12 on the semiconductor substrate 11, and a photoresist layer 14 on the material layer 12, the photoresist An opening pattern 16 is formed in the layer 14; the material of the semiconductor substrate 11 can be one of single crystal silicon, p...

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Abstract

The invention relates to a removing method of photosensitive resist which comprises the following steps of: providing semiconductor structure with a photosensitive resist layer, arranging the semiconductor structure into the oxygen plasma environment and removing the photosensitive resist layer by the incineration of the oxygen plasma, wherein, the generated power of an excitation source of the oxygen plasma is less than or equal to 400W; the invention also provides a method for applying the removing method of photosensitive resist to manufacture mosaic structure; the invention causes less damage to a dielectric layer of the lower layer of the photosensitive resist layer in the technique of removing the photosensitive resist.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing photoresist and a method for manufacturing a mosaic structure. Background technique [0002] In the semiconductor manufacturing process, the photolithography process forms a photoresist layer on the dielectric or metal film layer of the semiconductor substrate, and transfers the pattern on the mask plate to the photoresist layer through the exposure and development process; The photoresist patterned semiconductor substrate is transferred to etching or ion implantation equipment for etching or doping; then, the photoresist layer is removed. In the prior art, the photoresist layer is generally removed by oxygen plasma ashing. However, in the process of removing the photoresist by using the oxygen plasma ashing process, the plasma bombardment will cause damage to the film layer under the photoresist layer; In the wiring process, since the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/36G03F7/26G03F7/00
Inventor 邹晓东
Owner SEMICON MFG INT (SHANGHAI) CORP
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