Thin film transistor substrate and display device

A technology of thin film transistors and display devices, applied in the direction of transistors, electrical solid state devices, semiconductor devices, etc., can solve the problems of reduced productivity and increased manufacturing costs, and achieve the effect of excellent productivity and excellent TFT characteristics

Inactive Publication Date: 2008-12-24
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] In this way, in order to form the lower barrier metal layer, if a film forming chamber for forming the barrier metal layer is not provided in addition to the fil

Method used

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  • Thin film transistor substrate and display device
  • Thin film transistor substrate and display device
  • Thin film transistor substrate and display device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0142] (Embodiment 1)

[0143] image 3 It is a schematic cross-sectional view explaining an embodiment of the amorphous silicon TFT substrate of the present invention. in image 3 Attached to the previous description of the existing TFT substrate figure 2 The same number. According to this embodiment, the formation of an oxygen-containing layer (oxygen-containing layer) is confirmed as described in detail below.

[0144] in image 3 Among them, the source-drain wiring 34 electrically connected to the source electrode 28 and the drain electrode 29 is composed of an oxygen-containing layer and a pure Cu or Cu alloy thin film (such as Cu-0.5 atomic% Mn alloy, Cu-0.34 atomic% Ni alloy , Cu-1.3 atomic% Zn alloy, Cu-1.0 atomic% Mg alloy), and the oxygen-containing layer is formed to cover the amorphous silicon channel layer 33. The structure of the source-drain wiring 34 is shown below Figure 4 (e) and Figure 4 (f) In.

[0145] If contrast figure 2 with image 3 It can be seen tha...

Example

[0166] (Examples 1 to 2, Comparative Example 1)

[0167] If a source-drain electrode of a Cu alloy thin film with an oxygen-containing layer is used, even if the barrier metal layer is omitted, the diffusion of Cu into the half-layer body layer can still be suppressed, so that good TFT characteristics can be obtained. In the following example 1, In ~2, various experiments were conducted for the purpose of investigating this point. In Example 1 and Example 2, the oxygen-containing layer was formed by the same plasma oxidation method as that in the foregoing Embodiment 1. The specific experimental conditions and evaluation methods are as follows.

[0168] (Source-drain electrode)

[0169] In Example 1, as the wiring material for the source-drain electrodes, the Cu-0.5 atomic% Mn described in the first embodiment was used.

[0170] In Example 2, pure Cu was used to replace Cu-0.5 atomic% Mn in the foregoing Embodiment 1.

[0171] Although pure Cu was used in Comparative Example 1, ox...

Example Embodiment

[0190] (Example 3)

[0191] In this example, in addition to the foregoing example 2 (using pure Cu), plasma oxidation was performed under various conditions (condition 1 to condition 7) shown in Table 1 to form an oxygen-containing layer, and A TFT was produced in the same manner as in Example 1, and various heat treatments similar to those in Example 1 were performed on this TFT. For comparison, a TFT without heat treatment was also prepared. In either case, oxygen is used as the carrier gas.

[0192] Among the plasma oxidation treatment conditions 1 to 7 shown in Table 1, conditions 1, 2, 4, 5, and 7 are examples that are set within the range specified in the present invention. In particular, condition 2 has the same pressure, and condition 5 The higher power is an example set within the preferred range specified in the present invention. In contrast, the condition 3 pressure is as low as 38 Pa, and the condition 6 time is as long as 600 seconds, both of which are examples that ...

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Abstract

Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The thin film transistor substrate has a semiconductor layer (33) and source-drain electrodes (28, 29). The source-drain electrodes are composed of oxygen-containing layers (28a, 29a) and thin films (28b, 29b) of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer (33). And, the thin films (28a, 29a) of pure copper or a copper alloy connect with the semiconductor layer (33) of the thin film transistor through the oxygen-containing layers (28a, 29a).

Description

technical field [0001] The present invention relates to thin-film transistor substrates and display devices used in liquid crystal displays, semiconductors, optical parts, etc., and particularly relates to a new type of thin-film transistor substrate that can directly connect source-drain electrodes to semiconductor layers of thin-film transistors. Background technique [0002] Liquid crystal displays used in various fields ranging from small mobile phones to large TVs exceeding 30 inches are classified into simple matrix liquid crystal displays and active matrix liquid crystal displays according to pixel driving methods. Among them, an active matrix liquid crystal display having a thin film transistor (Thin Film Transistor: hereinafter referred to as "TFT") as a switching element is widely used because it can realize high-precision image quality and can also cope with high-speed animation. [0003] edge reference figure 1 , while explaining the configuration and operating ...

Claims

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Application Information

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IPC IPC(8): H01L29/43H01L29/786H01L27/12G02F1/1368G02F1/1343G02F1/1362H01L21/28H01L29/417
CPCH01L27/124H01L29/458H01L29/4908H01L21/02236H01L27/1214
Inventor 日野绫后藤裕史
Owner KOBE STEEL LTD
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