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Thin film transistor substrate and display device

A technology of thin film transistors and display devices, applied in the direction of transistors, electrical solid state devices, semiconductor devices, etc., can solve the problems of reduced productivity and increased manufacturing costs, and achieve the effect of excellent productivity and excellent TFT characteristics

Inactive Publication Date: 2008-12-24
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] In this way, in order to form the lower barrier metal layer, if a film forming chamber for forming the barrier metal layer is not provided in addition to the film forming chamber required for forming the gate electrode and the source electrode-drain electrode, the manufacturing cost will be incurred. up and down in productivity

Method used

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  • Thin film transistor substrate and display device
  • Thin film transistor substrate and display device
  • Thin film transistor substrate and display device

Examples

Experimental program
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Embodiment approach 1

[0143] image 3 It is a schematic cross-sectional view illustrating an embodiment of the amorphous silicon TFT substrate of the present invention. exist image 3 , attached with the aforementioned representation of the existing TFT substrate figure 2 same number. According to the present embodiment, as will be described in detail below, the formation of a layer containing oxygen (oxygen-containing layer) was confirmed.

[0144] exist image 3 Among them, the source-drain wiring 34 electrically connected to the source electrode 28 and the drain electrode 29 is composed of an oxygen-containing layer and a pure Cu or Cu alloy film (such as Cu-0.5 atomic % Mn alloy, Cu-0.34 atomic % Ni alloy , Cu-1.3 atomic % Zn alloy, Cu-1.0 atomic % Mg alloy), and the oxygen-containing layer is formed to cover the amorphous silicon channel layer 33 . The configuration of the source-drain wiring 34 is shown in the later-described Figure 4 (e) and Figure 4 (f).

[0145] If compared fi...

Embodiment 1～2

[0166] (Examples 1-2, Comparative Example 1)

[0167] If a source-drain electrode of a Cu alloy film with an oxygen-containing layer is used, even if the barrier metal layer is omitted, the diffusion of Cu to the half-layer body layer can be suppressed, thereby obtaining good TFT characteristics. In the following embodiment 1 In ~2, various experiments were performed to investigate this point. In Examples 1 and 2, the oxygen-containing layer was formed by the same plasma oxidation method as in Embodiment 1 described above. The specific experimental conditions and evaluation methods are as follows.

[0168] (source-drain electrodes)

[0169] In Example 1, Cu-0.5 atomic % Mn described in Embodiment 1 was used as the wiring material for the source-drain electrodes.

[0170] In Example 2, pure Cu is used to replace Cu-0.5 atomic % Mn in the aforementioned Embodiment 1.

[0171] In Comparative Example 1, although pure Cu was used, oxygen plasma treatment was not performed.

[...

Embodiment 3

[0191] In this example, in addition to performing the plasma oxidation method under various conditions (conditions 1 to 7) shown in Table 1 in the aforementioned example 2 (using pure Cu) to form an oxygen-containing layer, A TFT was produced in the same manner as in Example 1, and various heat treatments similar to those in Example 1 were performed on this TFT. For comparison, a TFT not subjected to heat treatment was also prepared. In either case oxygen was used as the carrier gas.

[0192] Among the plasma oxidation treatment conditions 1 to 7 shown in Table 1, the conditions 1, 2, 4, 5, and 7 are examples set within the range specified by the present invention. In particular, the pressure of the condition 2 is more the same, and the condition 5 The higher power is an example of setting within the preferable range prescribed by the present invention. On the other hand, the condition 3 where the pressure is as low as 38 Pa and the condition 6 as long as 600 seconds are exa...

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Abstract

Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The thin film transistor substrate has a semiconductor layer (33) and source-drain electrodes (28, 29). The source-drain electrodes are composed of oxygen-containing layers (28a, 29a) and thin films (28b, 29b) of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer (33). And, the thin films (28a, 29a) of pure copper or a copper alloy connect with the semiconductor layer (33) of the thin film transistor through the oxygen-containing layers (28a, 29a).

Description

technical field [0001] The present invention relates to thin-film transistor substrates and display devices used in liquid crystal displays, semiconductors, optical parts, etc., and particularly relates to a new type of thin-film transistor substrate that can directly connect source-drain electrodes to semiconductor layers of thin-film transistors. Background technique [0002] Liquid crystal displays used in various fields ranging from small mobile phones to large TVs exceeding 30 inches are classified into simple matrix liquid crystal displays and active matrix liquid crystal displays according to pixel driving methods. Among them, an active matrix liquid crystal display having a thin film transistor (Thin Film Transistor: hereinafter referred to as "TFT") as a switching element is widely used because it can realize high-precision image quality and can also cope with high-speed animation. [0003] edge reference figure 1 , while explaining the configuration and operating ...

Claims

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Application Information

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IPC IPC(8): H01L29/43H01L29/786H01L27/12G02F1/1368G02F1/1343G02F1/1362H01L21/28H01L29/417
CPCH01L27/124H01L29/458H01L29/4908H01L21/02236H01L27/1214
Inventor 日野绫后藤裕史
Owner KOBE STEEL LTD
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