Method for manufacturing semiconductor device

Abstract

The invention discloses a manufacturing method of a semiconductor device, which comprises the following steps: providing a semiconductor substrate comprising a metal connecting wire; forming a dielectric layer on the metal connecting wire; forming a photoresist mask layer on the surface of the dielectric layer; etching the dielectric layer with the photoresist mask layer as a mask to form a through-hole in the dielectric layer until the bottom of the through-hole is exposed to the metal connecting wire; removing the photoresist mask layer; removing the metal oxidizing layer on the surface of the metal connecting wire at the bottom of the through-hole; and removing moisture from the substrate. The manufacturing method of the semiconductor device can effectively remove the generated moisture before depositing a metal material into the through-hole of the dielectric layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device. Background technique [0002] Today's semiconductor device manufacturing technology is developing rapidly, semiconductor devices already have a deep submicron structure, and integrated circuits contain a huge number of semiconductor components. In the manufacturing process of semiconductor devices, when the size of the components on the wafer is continuously reduced, the density of the devices in the substrate is getting higher and higher, and the high-performance and high-density connections between components must not only be interconnected in a single layer, but also To perform interconnection between multiple interconnection layers, the density of interconnection lines is increasing day by day, which puts forward higher requirements on the performance of integrated circuits, especially the performance of hi...

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Problems solved by technology

The method of removal is to use hydrogen (H 2 ) and copper oxide to reduce copper, but the reaction process will produce water vapor 19, attached to the surface of the low dielectric constant material layer 13 and the inner wall of the through hole, on the one hand will cause the low dielectric constant material layer 13 Changes in the dielectric constant, on the other hand, adversely affect the subsequent process of depositing metal layers

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