Method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of the adverse effects of the deposition metal layer process, the change of the dielectric constant, etc., to improve the overall electrical performance and increase the breakdown voltage. , The effect of improving insulation performance

Inactive Publication Date: 2009-02-11
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

The method of removal is to use hydrogen (H 2 ) and copper oxide to reduce copper, but the reaction process will produce water vapor 19, attached to the surface of the low dielectric constant material layer 13 and the inne

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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[0039] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0040] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many ways other than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the invention is not limited to the specific implementations disclosed below.

[0041] The purpose of the manufacturing method of the semiconductor device of the present invention is to improve the insulation performance of the dielectric layer to the metal connection hole and the metal connection line, thereby increasing the breakdown voltage of the device and im...

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Abstract

The invention discloses a manufacturing method of a semiconductor device, which comprises the following steps: providing a semiconductor substrate comprising a metal connecting wire; forming a dielectric layer on the metal connecting wire; forming a photoresist mask layer on the surface of the dielectric layer; etching the dielectric layer with the photoresist mask layer as a mask to form a through-hole in the dielectric layer until the bottom of the through-hole is exposed to the metal connecting wire; removing the photoresist mask layer; removing the metal oxidizing layer on the surface of the metal connecting wire at the bottom of the through-hole; and removing moisture from the substrate. The manufacturing method of the semiconductor device can effectively remove the generated moisture before depositing a metal material into the through-hole of the dielectric layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device. Background technique [0002] Today's semiconductor device manufacturing technology is developing rapidly, semiconductor devices already have a deep submicron structure, and integrated circuits contain a huge number of semiconductor components. In the manufacturing process of semiconductor devices, when the size of the components on the wafer is continuously reduced, the density of the devices in the substrate is getting higher and higher, and the high-performance and high-density connections between components must not only be interconnected in a single layer, but also To perform interconnection between multiple interconnection layers, the density of interconnection lines is increasing day by day, which puts forward higher requirements on the performance of integrated circuits, especially the performance of hi...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 康芸聂佳相杨瑞鹏
Owner SEMICON MFG INT (SHANGHAI) CORP
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