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Preparation of (020) preferred orientation bismuth titanate film

A technology of preferred orientation and bismuth titanate, which is applied in the field of thin film materials, can solve the problems of difficult preferred orientation of thin films and poor ferroelectric properties, and achieve the effects of superior ferroelectric properties, small surface roughness and high film density

Inactive Publication Date: 2011-09-14
HARBIN INST OF TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the invention is to solve the problem of preparing Bi in the prior art 4-x La x Ti 3 o 12 It is difficult for thin films to achieve preferred orientation along the b-axis and poor ferroelectric properties, so a method for preparing bismuth titanate thin films with preferred orientation of (020) is provided

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  • Preparation of (020) preferred orientation bismuth titanate film
  • Preparation of (020) preferred orientation bismuth titanate film

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specific Embodiment approach 1

[0008] Specific Embodiment 1: The steps of the method for preparing the preferred orientation bismuth titanate film in this embodiment (020) are as follows: 1. Mix the mixture of lanthanum nitrate and bismuth hyponitrate with acetic acid in a molar ratio of 1:10 to 80, and then slowly add mass Percentage concentration is 99.0%~99.8% ethylene glycol solution, makes the mol ratio of lanthanum ion and bismuth ion summation and ethylene glycol in the solution be 1: 5~18, stirs at room temperature 8~12min, obtains solution A; Two, will Slowly add an ethylene glycol solution with a mass percent concentration of 99.0% to 99.8% into tetrabutyl titanate so that the molar ratio of bismuth ions to ethylene glycol in the solution is 1:5 to 18, and stir at room temperature for 8 to 12 minutes to obtain a solution B; 3. Mix solution A and solution B, and stir at room temperature for 20-40 minutes to obtain Bi 4-x La x Ti 3 o 12 Sol; four, the Pt / Ti / SiO 2 / Si substrates were ultrasonical...

specific Embodiment approach 2

[0010] Specific embodiment two: the difference between this embodiment and specific embodiment one is that in step one, the mixture of lanthanum nitrate and bismuth subnitrate is mixed with acetic acid in a molar ratio of 1:40, and then slowly add ethylene glycol with a mass percentage concentration of 99.5%. Alcohol solution, so that the molar ratio of the sum of lanthanum ions and bismuth ions in the solution to ethylene glycol is 1:10, and stirred at room temperature for 10 min. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0011] Specific embodiment three: the difference between this embodiment and specific embodiment one is that in step two, the ethylene glycol solution with a mass percentage concentration of 99.5% is slowly added in tetrabutyl titanate, so that the bismuth ion and ethylene glycol in the solution The molar ratio was 1:10, and stirred at room temperature for 10 min. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

The invention discloses a preparation method for the preferred orientation (020) of a bismuth titanate film, which relates to a preparation technique for the film material. The invention solves the problems of difficult implementation of the b axial preferred orientation for Bi4-xLaxTi3O12 film preparation and poor ferroelectricity in the prior art. The preparation method comprises the following steps: dissolving lanthanum nitrate and bismuth subnitrate in acetic acid, adding an ethylene glycol solution and mixing and stirring with tetrabutyl titanate solution added with the ethylene glycol solution to obtain Bi4-xLaxTi3O12 sol, then spin-coating the sol on a cleaned Pt / Ti / SiO2 / Si substrate, drying and roasting, and after crystallization and heat treatment, obtaining the Bi4-xLaxTi3O12 film. The preparation of the Bi4-xLaxTi3O12 of the invention has the advantages of high film forming quality, low crystallization temperature, (020) preferred orientation, high ferroelectric properties, low cost and simple technique, thereby being suitable for industrialized production.

Description

technical field [0001] The invention belongs to the field of film materials. Background technique [0002] Bismuth titanate (Bi 4 Ti 3 o 12 ) is a ferroelectric material with excellent performance. Because of its unique electrical, optical and optoelectronic properties, it has broad application prospects in modern microelectronics, microelectromechanical systems, and information storage. Studies have shown that lanthanum-doped bismuth titanate (Bi 4-x La x Ti 3 o 12 ) greatly improves the ferroelectric properties of bismuth titanate, and the fatigue performance is also significantly better than traditional ferroelectric materials. However, since the process temperature of large-scale integrated circuits is limited below 500°C, the temperature for preparing doped bismuth titanate thin films by existing methods is still above 500°C in most cases, making the surface of the prepared thin films rough and unpreferable. Orientation, poor ferroelectric properties, low densit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/50
Inventor 柯华徐加焕王文陈林贾德昌
Owner HARBIN INST OF TECH
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