Three connection solar cell having reflection layer and manufacturing method therefor
A technology for solar cells and reflective layers, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as slow progress, increased free path of non-equilibrium carriers, and lattice constant mismatch
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[0023] As shown in FIG. 1 , it is a triple-junction solar cell with a reflective layer disclosed by the present invention. The semiconductor material layer of the triple-junction solar cell (bottom cell, middle cell and top cell) comprising two sets of Bragg reflectors (DBR) is grown on a P-Ge substrate. The two sets of Bragg reflectors (DBR) are a set of aluminum indium phosphide AlInP / aluminum gallium indium phosphide AlGaInP top cell reflector 20 for reflecting short-wave photons and a set of aluminum arsenide AlAs / aluminum gallium arsenide AlGaAs for reflecting medium-wave photons Battery reflective layer 14.
[0024] The specific structure and manufacture are as follows, each growth is using metal-organic vapor deposition MOCVD technology.
[0025] P diffusion is performed on the P-Ge substrate at 500-700° C. to form a P-Ge bottom cell base region / N-Ge bottom cell emitter region 10 .
[0026] Due to the use of P diffusion, N-GaInP is used as the bottom cell window layer...
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