Groove insulated gate type gate-leakage composite field plate power device and preparation method thereof

Abstract

The invention discloses a groove-insulated gate type gate-drain composite source field plate power device and a fabrication method thereof. The device comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), an insulation medium layer (7), an insulated groove gate (8), a passivation layer (9), a gate field plate (10), a drain field plate (12) and a protection layer (13); the drain field plate (12) is electrically connected with the drain electrode (5), and the gate field plate (10) is electrically connected with the insulated groove gate (8), wherein, a groove (6) is opened on the barrier layer; and n floating field plates (11) are deposited on the passivation layer arranged between the gate field plate andthe drain field plate. All the floating field plates have the same size and are mutually independent, and the floating field plates are equidistantly distributed between the gate field plate and the drain field plate. The n floating field plates, the gate field plate and the drain field plate are completed on the passivation layer by one-time process. The power device has the advantages of simpleprocess, strong reliability and high output power, and the power device and the fabrication method can be used for fabricating high power devices.

Description

technical field The invention belongs to the technical field of microelectronics and relates to semiconductor devices, in particular to a grooved insulating gate type gate-drain compound field plate power device based on a heterojunction structure of a wide bandgap compound semiconductor material, which can be used as a basic device of a power system. technical background In today's world, power semiconductor devices such as power rectifiers and power switches have been widely used in many power fields such as switching power supplies, automotive electronics, industrial control, radio communications, and motor control. Power semiconductor devices must have the following two important parameters, namely high breakdown voltage and low on-resistance. The Baliga figure of merit reflects the compromise relationship between breakdown voltage and on-resistance in power semiconductor devices. In order to meet the needs of high breakdown voltage and low on-resistance, people are deve...

AI Technical Summary

Problems solved by technology

However, the manufacturing process of the high electron mobility transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material deposition, stripping, and cleaning. To make the insulating dielectric material deposited under the field plates of each layer have an appropriate thickness, cumbersome process debugging must be carried out, thus greatly increasing the difficulty of device manufacturing and reducing the yield of devices

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