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Apparatus for atomic layer deposition

一种沉积装置、沉积系统的技术，应用在涂层、金属材料涂层工艺、气态化学镀覆等方向，能够解决小获得ALD气体分配装置、不易灵活性等问题，达到紧凑装置的效果

Inactive Publication Date: 2009-04-22
EASTMAN KODAK CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional designs of ALD devices do not readily allow this flexibility
For example, conventional methods give little hope of obtaining an ALD gas distribution device delivered across the surface of a larger substrate or web arrangement.

Method used

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  • Apparatus for atomic layer deposition
  • Apparatus for atomic layer deposition
  • Apparatus for atomic layer deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0143] This example illustrates the manufacture of the zinc oxide semiconductor thin film of the present invention for manufacturing a working thin film transistor. In this structure, the gate of the device is a heavily doped silicon wafer, and the insulator is a silicon dioxide film grown by thermal processing on the silicon wafer before depositing a zinc oxide semiconductor film.

[0144] The zinc oxide semiconductor layer is applied with the deposition system of the present invention. Two tests were performed with a substrate temperature of 200°C and the following conditions:

[0145] Table 1

[0146]

sample Diethylzinc

bubbler flow

(sccm) metal precursor

dilution flow

(sccm) air flow

(sccm) water bubbler flow

(sccm) oxidizing agent

dilution flow

(sccm) Nitrogen

purge flow

(sccm)

cycle 1-A 10 620 5 10 1000 1500 40 1-B 5 620 5 5 1000 1500 40

[0147] After depositing ZnO, aluminum con...

Embodiment 2

[0152] This example illustrates the fabrication of aluminum oxide thin films of the present invention, showing that high quality insulating films with excellent breakdown voltage can be fabricated. In this structure, a bare silicon wafer is used as an electrode, and an aluminum oxide film is grown on the electrode by the above-mentioned apparatus of the present invention.

[0153] Aluminum oxide layers were applied with substrates deposited at 200°C and below, where 2-B is a repeated data point.

[0154] table 3

[0155]

sample Trimethylaluminum

bubbler flow

(sccm) metal precursor

dilution flow

(sccm) air flow

(sccm) water bubbler flow

(sccm) oxidizing agent

dilution flow

(sccm) Nitrogen

purge flow

(sccm)

cycle 2-A 10 620 10 10 1100 1500 100 2-B 10 620 10 10 1100 1500 100 2-C 10 620 10 10 1100 1500 200 2-D 20 620 10 20 1100 1500 100

[0156]After alumina deposition,...

Embodiment 3

[0161] This example illustrates the use of heavily doped silicon as the gate material, followed by Al 2 o 3 Working transistor devices were fabricated using ZnO as the dielectric and the semiconductor, wherein the latter two species were deposited using the present invention.

[0162] Aluminum oxide films are first deposited according to the following conditions:

[0163] table 5

[0164]

[0165] After alumina deposition, two samples were coated with ZnO using the above setup according to the following conditions:

[0166] Table 6

[0167] Diethylzinc

[0168] Thin film transistors were obtained with 50 μm channel length and 500 μm channel width by evaporating aluminum contacts on the resulting multilayer device through a shadow mask. The results for the device are shown below:

[0169] Table 7

[0170]

[0171] The above data show that by depositing all critical layers with the apparatus of the present invention, high quality thin film tra...

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Abstract

The present invention provides a distribution manifold (10) for thin-film material deposition onto a substrate (20) comprising a plurality of inlet ports for a sequence of gaseous materials, an output face (18) comprising a plurality of open elongated output channels (12), each channel extending in a length direction substantially in parallel. The distribution manifold (10) can be employed in a deposition system for thin film deposition, further comprising a plurality of sources for a plurality of gaseous materials and a support for positioning a substrate in pre-designed close proximity to the output face of the distribution manifold (10). During operation of the system, relative movement between the output face and the substrate support is accomplished.

Description

field of invention [0001] The present invention relates generally to the deposition of thin film species, and more particularly to apparatus for depositing atomic layers on substrates utilizing distribution manifolds that allow lateral gas flow across the substrate. Background of the invention [0002] Among the widely used techniques for thin film deposition, chemical vapor deposition (CVD) reacts chemically reactive molecules in a reaction chamber to deposit a desired thin film on a substrate. Molecular precursors for CVD applications include the elemental (atomic) constituents of the film to be deposited, and generally also other constituents. CVD precursors are volatile molecules delivered to the chamber in the gas phase in order to react to form a thin film on a substrate. The chemical reaction deposits a film of the desired film thickness. [0003] Most CVD techniques generally require a precisely controlled flow of one or more molecular precursors into the CVD react...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/54C23C16/455
CPCC23C16/45563C23C16/45525C23C16/45551C23C16/545C23C16/45574C23C16/45595C23C16/52H01L29/76
Inventor D·H·李维
Owner EASTMAN KODAK CO
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