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Method for preparing phosphorosilicate glass

A technology of phosphosilicate glass and silane, which is applied in the field of preparation of phosphosilicate glass and can solve problems such as unfavorable precise etching process

Inactive Publication Date: 2009-04-29
SHANGHAI HUA HONG NEC ELECTRONICS
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Problems solved by technology

Therefore, if the "pattern pattern is too large" in the prepared phosphosilicate glass layer, if the pattern expands to the position of the etching contact hole, the etching will stop due to the different etching properties of the two regions, which is not conducive to accurate etching. etching process

Method used

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  • Method for preparing phosphorosilicate glass
  • Method for preparing phosphorosilicate glass

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Embodiment Construction

[0011] In the preparation of phosphosilicate glass, it is usually necessary to cover the steps formed by the gate. In the high-density plasma process, there are two phenomena of deposition and sputtering, and the relative ratio of deposition and sputtering in the process (referred to as the deposition-sputtering ratio) can be adjusted by adjusting the process conditions. In the present invention, the deposition of phosphosilicate glass in the high-density plasma process is divided into multiple steps and carried out continuously. In the first step of deposition, the deposition and sputtering ratio is relatively large, and the deposition and sputtering ratio can be controlled at 5.7~ Between 6.7, the adjustment of the deposition sputtering ratio can be adjusted by the reactive gas silane (SiH 4 ) to control the total amount, the power and pressure in general deposition cannot be easily changed. increase SiH 4 The flow rate can significantly increase the deposition sputtering ...

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Abstract

The invention discloses a preparation method of phoshosilicate glass, which is characterized in that silane is used as reaction gas, high-density plasma deposition technology is utilized for preparation, and continuous deposition is carried out by using technological conditions of various multi-step deposition sputtering ratios in the process of deposition. During the first-step deposition, the deposition is carried out by using the technological condition of deposition sputtering ratio between 5.7 and 6.7; and then deposition is carried out by using the technological condition of deposition sputtering ratio less than 5.5 in the deposition steps. The preparation method can obviously reduce the horizontal width and vertical height of patterns in phoshosilicate glass layers and is suitable for semiconductor device manufacture.

Description

technical field [0001] The invention relates to a method for preparing phosphosilicate glass in the manufacture of semiconductor devices. Background technique [0002] Phosphosilicate glass (PSG) is a silicon dioxide containing phosphorus. SiO can be prepared by CVD process 2 Incorporate pH into the reaction 3 Reactive gases are configured where the pH 3 reacts with oxygen to form P 2 o 5 , and contained in SiO 2 Inside the deposited film, so phosphosilicate glass is made of P 2 o 5 and SiO 2 mixture together. Phosphorus content in PSG can be determined by pH 3 The flow control is adjusted. The commonly used PSG deposition process is high-density plasma chemical vapor deposition process (HDP CVD). Since the PSG material has a lower deposition temperature, a relatively flat surface and better gap filling capability, it is now usually used as the first interlayer dielectric. In SiO 2 P 2 o 5 Membrane stress can be reduced, thereby improving membrane integrity. ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03B8/04
Inventor 秦文芳
Owner SHANGHAI HUA HONG NEC ELECTRONICS
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