Semiconductor wafer metal substrate web corrosion prevention liquid and its use method

A metal substrate, corrosion protection technology, applied in the field of cleaning fluid, can solve the problem of small operating window, achieve low corrosion rate, good application prospects, and improve the effect of operating window

Inactive Publication Date: 2009-05-06
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Semiconductor wafer metal substrate web corrosion prevention liquid and its use method
  • Semiconductor wafer metal substrate web corrosion prevention liquid and its use method
  • Semiconductor wafer metal substrate web corrosion prevention liquid and its use method

Examples

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Example

[0024] Examples 1-22

[0025] Table 1 shows the formulations of Examples 1-22 of the semiconductor wafer metal substrate corrosion protection solution of the present invention. According to the components and contents listed in Table 1, simply mix and uniformly, that is, each semiconductor wafer metal substrate is prepared. Material corrosion protection fluid.

[0026] Table 1 The corrosion protection solution 1-22 of the semiconductor wafer metal substrate of the present invention

[0027]

[0028]

Example Embodiment

[0029] Method Example 1

[0030] How to use the corrosion protection solution for semiconductor wafer metal substrates, and the specific steps:

[0031] 1. Use the hydroxylamine cleaning solution (F1) in Table 2 to clean the wafer after plasma etching at 65°C for 20 minutes.

[0032] 2. Use metal corrosion protection solution 8 in Table 1 to perform rotary spray cleaning on the wafer for 10 minutes.

[0033] 3. Dry afterwards.

Example Embodiment

[0034] Method Example 2

[0035] How to use the corrosion protection solution for semiconductor wafer metal substrates, and the specific steps:

[0036] 1. Use the hydroxylamine cleaning solution (F1) in Table 2 to clean the wafer after plasma etching at 65°C for 15 minutes.

[0037] 2. Use metal corrosion protection solution 8 in Table 1 to perform rotary spray cleaning on the wafer for 5 minutes.

[0038] 3. Use deionized water to clean the wafer by rotating spray for 2 minutes.

[0039] 4. Dry afterwards.

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Abstract

The invention discloses a semiconductor wafer metal base material corrosion prevention liquid which contains carboxyl polymer, polymer containing paint affinity groups and water. The invention also discloses a using method of the semiconductor wafer metal base material corrosion prevention liquid: after washing liquid is utilized to remove residual on a semiconductor wafer after etched or etched/incinerated, the semiconductor wafer metal base material corrosion prevention liquid is directly utilized to wash a semiconductor wafer, and then the semiconductor wafer is dried. The semiconductor wafer metal base material corrosion prevention liquid has lower corrosion velocity to metal (especially aluminum), and has the advantages of environment protection and low cost as well as convenient use and obvious effect, and has better application foreground in the micro-electronics field of metal washing and semiconductor washing, and the like.

Description

technical field [0001] The invention relates to a cleaning liquid and a method for using it in the cleaning process of semiconductor manufacturing, in particular to a corrosion protection liquid for metal substrates of semiconductor wafers and a method for using the same. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photor...

Claims

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Application Information

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IPC IPC(8): G03F7/42C08L33/02C08L35/00
CPCC11D11/0047C11D3/0073G03F7/42C11D7/265H01L21/02068C11D3/3765C23F11/173
Inventor 刘兵彭洪修
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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