Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor wafer metal substrate web corrosion prevention liquid and its use method

A metal substrate, corrosion protection technology, applied in the field of cleaning fluid, can solve the problem of small operating window, achieve low corrosion rate, good application prospects, and improve the effect of operating window

Inactive Publication Date: 2009-05-06
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And this often brings the problem that the operating window of the rinsing process is too small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor wafer metal substrate web corrosion prevention liquid and its use method
  • Semiconductor wafer metal substrate web corrosion prevention liquid and its use method
  • Semiconductor wafer metal substrate web corrosion prevention liquid and its use method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～22

[0025] Table 1 shows the formulas of Examples 1-22 of the semiconductor wafer metal substrate corrosion protection liquid of the present invention. According to the components listed in Table 1 and their contents, simply mix them uniformly to obtain each semiconductor wafer metal substrate Material corrosion protection fluid.

[0026] Table 1 Semiconductor wafer metal substrate corrosion protection solution 1-22 of the present invention

[0027]

[0028]

Embodiment 1

[0030] The method of using the corrosion protection liquid for the metal substrate of the semiconductor wafer, the specific steps:

[0031] 1. Use the hydroxylamine cleaning solution (F1) in Table 2 to clean the plasma-etched wafer at 65° C. for 20 minutes.

[0032] 2. Use the metal corrosion protection solution 8 in Table 1 to clean the wafer with rotating spray for 10 minutes.

[0033] 3. Dry afterwards.

Embodiment 2

[0035] The method of using the corrosion protection liquid for the metal substrate of the semiconductor wafer, the specific steps:

[0036] 1. Use the hydroxylamine-based cleaning solution (F1) in Table 2 to clean the plasma-etched wafer at 65° C. for 15 minutes.

[0037] 2. Use the metal corrosion protection solution 8 in Table 1 to perform rotary spray cleaning on the wafer for 5 minutes.

[0038] 3. Clean the wafer with deionized water for 2 minutes in a spin spray.

[0039] 4. Dry afterwards.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor wafer metal base material corrosion prevention liquid which contains carboxyl polymer, polymer containing paint affinity groups and water. The invention also discloses a using method of the semiconductor wafer metal base material corrosion prevention liquid: after washing liquid is utilized to remove residual on a semiconductor wafer after etched or etched / incinerated, the semiconductor wafer metal base material corrosion prevention liquid is directly utilized to wash a semiconductor wafer, and then the semiconductor wafer is dried. The semiconductor wafer metal base material corrosion prevention liquid has lower corrosion velocity to metal (especially aluminum), and has the advantages of environment protection and low cost as well as convenient use and obvious effect, and has better application foreground in the micro-electronics field of metal washing and semiconductor washing, and the like.

Description

technical field [0001] The invention relates to a cleaning liquid and a method for using it in the cleaning process of semiconductor manufacturing, in particular to a corrosion protection liquid for metal substrates of semiconductor wafers and a method for using the same. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/42C08L33/02C08L35/00
CPCC11D11/0047C11D3/0073G03F7/42C11D7/265H01L21/02068C11D3/3765C23F11/173C11D2111/22
Inventor 刘兵彭洪修
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com