Bipolar junction transistor

A bipolar junction, transistor technology, used in transistors, semiconductor devices, electrical components, etc., can solve problems such as high breakdown voltage, achieve high breakdown voltage, improve common emitter current gain, and enhance transportation capacity. Effect
CN101425536AInactive Publication Date: 2009-05-06UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2009-05-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

A bipolar junction transistor relates to the technical field of a semiconductor power device. The transistor comprises an underlay, a collecting region, an emitting region, a base region, an emitting electrode, a base electrode and a collecting electrode. The transistor is characterized in that a floating buried layer is arranged inside the base region; and the materials of the floating buried layer are different from that of the base region. The invention has the advantages of both good direct current characteristic and breakdown characteristic, namely both high current gain and higher breakdown voltage, and can be widely applied to the field of high-power converters (such as DC-DC converter and inverter).
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Description

technical field

[0001] The invention relates to the technical field of semiconductor power devices, more specifically, to a high-power bipolar junction transistor (Bipolar Junction Transistor, BJT). Background technique

[0002] In recent years, with the rapid development of microelectronics technology and the urgent needs of automotive electronics, aerospace, industrial control, power transportation and other related fields, the development of new high-power semiconductor devices has attracted more and more attention. Among them, the introduction of wide bandgap semiconductor materials into power devices has become an important development direction. Compared with Si, GaAs and other materials, wide bandgap semiconductor material SiC has high bandgap width, high saturation electron drift velocity, high critical breakdown electric field and high thermal conductivity, making it a Ideal semiconductor material for high temperature and high power applications. At present, SiC-M...

Claims

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