Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for growth of zinc oxide nano-stick array

A technology of zinc oxide nanorods and arrays, applied in the field of semiconductors, can solve problems such as complex processes and increased pollution, and achieve the effects of simple process, convenient operation, and low production cost

Inactive Publication Date: 2009-05-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the introduction of metal catalysts makes it possible to grow high-quality ZnO nanorods, it also complicates the process and adds some unnecessary pollution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for growth of zinc oxide nano-stick array
  • Method for growth of zinc oxide nano-stick array
  • Method for growth of zinc oxide nano-stick array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0031] see again figure 1 Shown, key of the present invention is to solve the problem of growing high-quality ZnO nanorod array on Si substrate, it is characterized in that, comprises the steps:

[0032] Get a substrate 30, the substrate 30 is a Si substrate with large mismatch;

[0033] A thin Zn metal isolation layer 20 is grown on the Si(111) crystal plane on the substrate 30 by MOCVD method, the growth temperature is 600° C., and the reaction chamber pressure is 76 Torr. The pressure of the zinc organic source bottle is controlled at 800Torr, and the flow rate is controlled at 48SCCM;

[0034] Turn on the oxygen, control the flow rate at 1 SLM, and grow the ZnO nanorod array epitaxial layer 10 . Adjust the flow rate of oxygen carrier gas, control it at 8SLM, and the growth time is 30 minutes;

[0035] SEM, XRD and PL tests were performed on the ZnO nanorod arrays grown by the above method. The SEM photos show that the ZnO nanorod arrays are uniform in thickness, neatly...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for growing a zinc oxide nanometer rod array, which is characterized in that the method comprises the following steps: step 1, taking a substrate; step 2, introducing a zinc source in a MOCAD device by utilizing carrier gas and growing a zinc isolating layer on the substrate; and step 3, introducing the zinc source and oxygen in the MOCAD device by utilizing the carrier gas, so that the epitaxial layer of the zinc oxide nanometer rod array is obtained on the zinc isolating layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for growing zinc oxide nanorod arrays by controlling the zinc source flow rate and the oxygen carrier gas flow rate. Background technique [0002] Zinc oxide (ZnO) material, as a representative of the third-generation wide-bandgap semiconductor material, has attracted much attention because of its huge potential application value in ultraviolet and blue light-emitting diodes and lasers, and has become a new research hotspot in recent years. Compared with other materials, especially compared with the more mature gallium nitride (GaN) material, ZnO has three obvious advantages: (1) Higher exciton binding energy. Its exciton binding energy is 60meV, which is about three times that of GaN, which makes it easier to achieve lasing at room temperature or higher and has higher lasing efficiency; (2) There are already commercial ZnO Single crystal substrates are sold. Ga...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82B3/00
Inventor 范海波杨少延张攀峰魏鸿源刘祥林朱勤生陈涌海王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com