NOR gate logic circuit and its forming method

Abstract

The invention relates to a NOR logic circuit and a fabricating method thereof. The NOR logic circuit comprises two input terminals, two enhancement type back-gate ZnO nanowire field effect transistors, and a depletion mode back-gate ZnO nanowire field effect transistor. The input terminals are respectively used for receiving input voltage signals; the gate electrodes of the two enhancement type back-gate ZnO nanowire field effect transistors are coupled to the two input terminals respectively, and the source electrodes thereof are coupled to an earth point respectively; the drain electrode of the depletion mode back-gate ZnO nanowire field effect transistor is coupled to a voltage source, and the gate electrode and the source electrode of the depletion mode back-gate ZnO nanowire field effect transistor, and the drain electrodes of the two enhancement type back-gate ZnO nanowire field effect transistors are coupled at a point; and the point serves as an output terminal used for outputting the voltage signals. The invention utilizes the manufacturing technology and the interconnection technology of ZnO nanowire materials and ZnO nanowire field effect transistors, and fabricates the NOR logic circuit based on the direct coupling field effect of the ZnO nanowire field effect transistor.

Description

technical field [0001] The invention relates to the field of compound semiconductor materials and devices, in particular to a NOR gate logic circuit based on a back-gate zinc oxide nanowire field-effect transistor (Direct-coupled FET Logic, referred to as DCFL) and its formation method. Background technique [0002] ZnO is a new type of multifunctional compound semiconductor material with direct bandgap of II-VI groups, and is called the third generation wide bandgap semiconductor material. The ZnO crystal has a wurtzite structure, the band gap is about 3.37eV, and the exciton binding energy is about 60meV. ZnO has the characteristics of semiconductor, photoelectricity, piezoelectricity, pyroelectricity, gas sensitivity and transparent conductivity, and has broad potential application value in many fields such as sensing, sound, light and electricity. [0003] In recent years, research on ZnO materials and devices has received extensive attention. The scope of research co...

AI Technical Summary

Problems solved by technology

However, since intrinsic ZnO is an N-type semiconductor, and most of the fabricated ZnO NW FETs are depletion-type devices, the application of ZnO nanowire materials to realize logic circuits based on enhancement / depletion-type FETs is restricted.

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