Etching stopping layer, semi-conductor device with through hole and forming method thereof

An etch stop layer, semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as high resistance, achieve low brightness, reduce resistance, and small lithography lines wide effect
CN101459058BActive Publication Date: 2013-08-14SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2013-08-14

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Abstract

The invention discloses an etch stop layer which at least comprises a first etch stop layer and a second etch stop layer on the first etch-stop layer, wherein nitrogen content of the second etch stop layer is higher than that of the first etch stop layer. The invention further discloses a manufacturing method of the etch stop layer, a semiconductor device which utilizes the etch stop layer and isprovided with through holes, and a method thereof. By utilizing the etch stop layer, a front material layer connected with the etch stop layer can be effectively prevented from nitridation, thereby achieving the purpose of reducing circuit resistance and improving shaping quality of circuits.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an etching stop layer, a semiconductor device with a through hole and a forming method thereof. Background technique

[0002] The integrated circuit manufacturing process is a planar manufacturing process that combines photolithography, etching, deposition, ion implantation and other processes to form a large number of various types of complex devices on the same substrate and connect them to each other to have a complete electronic functions. Among them, any deviation in the process may cause the performance parameters of the circuit to deviate from the design value. At present, with the continuous proportional reduction of the device feature size of VLSI and the continuous improvement of integration level, higher requirements are put forward for the control of each step of the process and the accuracy of the process results.

[0003] Taking the etching pro...

Claims

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