35results about How to "Prevent nitriding" patented technology

An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2 nm thick with less than 4 nm in the field areas. The process includes depositing an ultra-thin TaN barrier layer having a high nitrogen concentration that produces high resistivity, preferably at least 1000 micro-ohm-cm. The ultra-thin TaN film is deposited by a low deposition rate process of less than 20 nm / minute, preferably 2-10 nm / min, to produce the high N / Ta ratio layer without nitriding the tantalum target. The layer provides a barrier to copper (Cu) diffusion and a high etch resistant etch-stop layer for subsequent deposition-etch processes.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.

A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

The invention discloses a titanium purification device. The titanium purification device comprises a purification bag, a high-pressure and high-temperature inert gas device, a heating device and an exhaust duct, wherein the purification bag is of a closed tank structure, a crucible is arranged in the purification bag, a gap between the crucible and the purification bag is filled with a thermal insulation material, and a cooling device is embedded in the thermal insulation material; an outlet of the high-pressure and high-temperature inert gas device penetrates through the bottom of the purification bag and the thermal insulation material to be communicated with the bottom of the crucible, and a liquid outlet pipe extending out of the purification bag is arranged at the bottom of the crucible; the heating device comprises a middle heater, the upper end of the middle heater is fixed at the top of the purification bag, and the lower end is arranged in a cavity of the crucible; and the exhaust duct is arranged at the top of the purification bag. According to the titanium purification device, preheated inert gas blown from the bottom has a stirring effect on a titanium solution, enabling the surface titanium solution and inner titanium solution to have mass exchange continuously, so that impurities in the titanium solution rise to the liquid level, and volatile impurities are removed.

The invention discloses an etch stop layer which at least comprises a first etch stop layer and a second etch stop layer on the first etch-stop layer, wherein nitrogen content of the second etch stop layer is higher than that of the first etch stop layer. The invention further discloses a manufacturing method of the etch stop layer, a semiconductor device which utilizes the etch stop layer and isprovided with through holes, and a method thereof. By utilizing the etch stop layer, a front material layer connected with the etch stop layer can be effectively prevented from nitridation, thereby achieving the purpose of reducing circuit resistance and improving shaping quality of circuits.

The invention discloses a plasma arc fusion covering abrasion-resistant and corrosion-resistant coating on a titanium alloy surface and a preparation method of the plasma arc fusion covering abrasion-resistant and corrosion-resistant coating. Powder with nickel base components serves as a powder supplying material, and by means of appropriate plasma arc technological parameter selection and combination of a related protection cover and a gas protection device, oxidation and nitridation of substrate base metal in the fusion covering process are effectively prevented; and abrasion-resistant and corrosion-resistant intensifying of the titanium alloy surface is conveniently achieved on plasma arc equipment which is relatively low in price, and higher fusion covering efficiency is acquired through the beneficial effect that the power of the plasma arc is large; and the hardness of a fusion covering layer acquired after fusion covering gives priority to a nickel base solid solution, TiC, TiB2, CrB and other wild phases are distributed in the fusion covering layer, and the hardness of the fusion covering layer can reach about 1,200 Hv.

An optical magnetic recording medium. Characterized in the it comprises a substrate and, formed thereon in the following order, a soft magnetic film, a protective film, a resin layer having a servopattern formed thereon, a reflective film, an under dielectric film, a recording layer, a upper dielectric film and a cover layer. An optical magnetic recording medium, characterized in that it comprises a substrate and, formed thereon in the following order, a soft magnetic film, a protective film, a resin layer having a servopattern formed thereon, a reflective film, an under dielectric film, a recording layer, a upper dielectric dielectric film and a cover layer.

The invention provides a method for preparing boron-containing micro-alloy steel by using boron-containing pig iron as a boron charging agent, and belongs to the technical field of metallurgy. The method comprises the following steps: (1) preparing industrial pure iron, the boron-containing pig iron, ferro-titanium, manganese metal, iron-carbon alloy, ferro-silicon alloy and pure aluminium serving as raw materials according to predetermined components; (2) adding the prepared industrial pure iron and iron-carbon alloy to an induction furnace, melting the materials, sequentially adding the ferro-silicon alloy, the pure aluminium, the ferro-titanium, the manganese metal and the boron-containing pig iron, melting under a vacuum condition, and feeding argon for refinement; (3) after ending refinement, casting into cast ingots, then heating to 1200+ / -10 DEG C, and preserving heat for 0.5-2 hours; (4) rolling the cast ingots subjected to heat preservation by two stages; and carrying out final rolling, thus obtaining roll steel; and (5) continuously cooling the roll steel to 530-560 DEG C at the rate of 40-50 DEG C / s, and then carrying out air cooling to room temperature, thus obtaining the boron-containing micro-alloy steel. The method has the advantages that the composite cost is low, the industrialization is easy to realize, and the prepared product has excellent performances and good application prospect.