33results about How to "Prevent nitriding" patented technology

An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2 nm thick with less than 4 nm in the field areas. The process includes depositing an ultra-thin TaN barrier layer having a high nitrogen concentration that produces high resistivity, preferably at least 1000 micro-ohm-cm. The ultra-thin TaN film is deposited by a low deposition rate process of less than 20 nm / minute, preferably 2-10 nm / min, to produce the high N / Ta ratio layer without nitriding the tantalum target. The layer provides a barrier to copper (Cu) diffusion and a high etch resistant etch-stop layer for subsequent deposition-etch processes.

Method for forming metallic coat where, the surface of workpiece is partly covered with a masking material having a predetermined pattern, and metallic powders are ejected to the surface at the ejection velocity of 80 m / sec or higher or at the ejection pressure of 0.3 Mpa or higher by utilizing an ejection apparatus such as blast work apparatus, in order to easily attain the metallic coat having high adhesion strength without washing process, nor heat process by a relatively simple facility.

An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2 nm thick with less than 4 nm in the field areas. The process includes depositing an ultra-thin TaN barrier layer having a high nitrogen concentration that produces high resistivity, preferably at least 1000 micro-ohm-cm. The ultra-thin TaN film is deposited by a low deposition rate process of less than 20 nm / minute, preferably 2-10 nm / min, to produce the high N / Ta ratio layer without nitriding the tantalum target. The layer provides a barrier to copper (Cu) diffusion and a high etch resistant etch-stop layer for subsequent deposition-etch processes.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.

The invention discloses an anti-nitridation process for copper-tin composite plating, which comprises the following steps: deoiling and cleaning a workpiece, and then performing weak corrosion treatment on the workpiece with sulfuric acid; performing anodic cleaning on the workpiece, wherein the workpiece subjected to anodic cleaning needs to be taken out of the tank while electrified; performing nickel preplating: keeping the workpiece non-electrified and placing the workpiece in an electroplating solution for 2-4 minutes before nickel preplating, then preplating nickel for 1 mu m, and plating dark nickel for 1-2 mu m; performing activating treatment on the workpiece with sulfuric acid; and performing copper cyanideless electroplating, plating dark tin on the surface of the copper-electroplated layer of the workpiece, and finally performing stabilizing treatment. According to the electroplating process disclosed by the invention, the workpiece can similarly achieve the purpose of preventing nitridation, carburization and cyanogen infiltration in case of a thinner copper-plated layer, thus reducing the thickness of the copper-plated layer, reducing the copper consumption, shortening the electroplating time and improving the electroplating efficiency.

A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

The invention discloses an anti-nitridation process for copper-tin composite plating, which comprises the following steps: deoiling and cleaning a workpiece, and then performing weak corrosion treatment on the workpiece with sulfuric acid; performing anodic cleaning on the workpiece, wherein the workpiece subjected to anodic cleaning needs to be taken out of the tank while electrified; performing nickel preplating: keeping the workpiece non-electrified and placing the workpiece in an electroplating solution for 2-4 minutes before nickel preplating, then preplating nickel for 1 mu m, and plating dark nickel for 1-2 mu m; performing activating treatment on the workpiece with sulfuric acid; and performing copper cyanideless electroplating, plating dark tin on the surface of the copper-electroplated layer of the workpiece, and finally performing stabilizing treatment. According to the electroplating process disclosed by the invention, the workpiece can similarly achieve the purpose of preventing nitridation, carburization and cyanogen infiltration in case of a thinner copper-plated layer, thus reducing the thickness of the copper-plated layer, reducing the copper consumption, shortening the electroplating time and improving the electroplating efficiency.

The invention discloses a titanium purification device. The titanium purification device comprises a purification bag, a high-pressure and high-temperature inert gas device, a heating device and an exhaust duct, wherein the purification bag is of a closed tank structure, a crucible is arranged in the purification bag, a gap between the crucible and the purification bag is filled with a thermal insulation material, and a cooling device is embedded in the thermal insulation material; an outlet of the high-pressure and high-temperature inert gas device penetrates through the bottom of the purification bag and the thermal insulation material to be communicated with the bottom of the crucible, and a liquid outlet pipe extending out of the purification bag is arranged at the bottom of the crucible; the heating device comprises a middle heater, the upper end of the middle heater is fixed at the top of the purification bag, and the lower end is arranged in a cavity of the crucible; and the exhaust duct is arranged at the top of the purification bag. According to the titanium purification device, preheated inert gas blown from the bottom has a stirring effect on a titanium solution, enabling the surface titanium solution and inner titanium solution to have mass exchange continuously, so that impurities in the titanium solution rise to the liquid level, and volatile impurities are removed.

A lithium anode of a thermal battery may include a metal alloy foam in which a plurality of pores is formed and including nickel (Ni), iron (Fe), chromium (Cr), and aluminum (Al) mixed in a predetermined composition ratio, and lithium impregnated into the metal alloy foam in a molten state and accommodated in the pores, wherein the chromium in the composition ratio may facilitate the impregnation of the lithium into the pores and reduce the reactivity of the metal alloy foam to the lithium at an operating temperature of the thermal battery, and the aluminum in the composition ratio may facilitate the impregnation of the lithium into the pores and prevent the lithium from penetrating into a surface of the metal alloy foam.

A Cu wiring forming method of forming Cu wiring that is to be arranged in contact with tungsten wiring, by filling Cu into a recess formed in a substrate, includes: removing a tungsten oxide formed on a surface of the tungsten wiring; forming a nitriding preventing film at least on the surface of the tungsten wiring in the recess; forming a barrier film that prevents diffusion of Cu, on a surface in the recess from above the nitriding preventing film; forming a liner film on the barrier film; and filling a Cu film on the liner film.

The invention discloses a deep level nitriding process for engine cylinder bushes, comprising the procedures of cleaning, charging, ion nitriding and tapping, wherein in the charging procedure, a bottom supporting disk is supported on a cathode disc by using a conductor column, cylinder bushes are uniformly arranged on the bottom supporting disk, a top plate is arranged on the cylinder bushes, and through holes are arranged on the top plate and the bottom supporting disk corresponding to the positions of the cylinder bushes; and in the ion nitriding procedure, arc light starts when the vacuum degree in a furnace reaches 50Pa below and the voltage is set at 650V, then the voltage and the duty cycle are sequentially increased, ammonia gas is fed into the furnace after the voltage is adjusted to 700V and the arc light frequency is reduced, the voltage in the furnace is adjusted to 750V when the arc light basically disappears, the glow is stable and the flow of the ammonia gas is not increased, heat preservation is carried out at 520 DEG C for 15h and 540 DEG C for 25h, the flow of the ammonia gas is 0.5-0.8L / min and the vacuum degree is 500-800Pa, and the temperature of the cylinder bushes are gradually reduced under the glow state, and furnace shutdown, gas cutoff and cooling are carried out after the temperature is reduced to 300 DEG C below. Based on the ion nitriding process disclosed by the invention, the nitriding speed is high, the diffusion layer is deep, and the technical requirements of engine cylinder bushes are met.

The invention discloses an etch stop layer which at least comprises a first etch stop layer and a second etch stop layer on the first etch-stop layer, wherein nitrogen content of the second etch stop layer is higher than that of the first etch stop layer. The invention further discloses a manufacturing method of the etch stop layer, a semiconductor device which utilizes the etch stop layer and isprovided with through holes, and a method thereof. By utilizing the etch stop layer, a front material layer connected with the etch stop layer can be effectively prevented from nitridation, thereby achieving the purpose of reducing circuit resistance and improving shaping quality of circuits.

The invention discloses a plasma arc fusion covering abrasion-resistant and corrosion-resistant coating on a titanium alloy surface and a preparation method of the plasma arc fusion covering abrasion-resistant and corrosion-resistant coating. Powder with nickel base components serves as a powder supplying material, and by means of appropriate plasma arc technological parameter selection and combination of a related protection cover and a gas protection device, oxidation and nitridation of substrate base metal in the fusion covering process are effectively prevented; and abrasion-resistant and corrosion-resistant intensifying of the titanium alloy surface is conveniently achieved on plasma arc equipment which is relatively low in price, and higher fusion covering efficiency is acquired through the beneficial effect that the power of the plasma arc is large; and the hardness of a fusion covering layer acquired after fusion covering gives priority to a nickel base solid solution, TiC, TiB2, CrB and other wild phases are distributed in the fusion covering layer, and the hardness of the fusion covering layer can reach about 1,200 Hv.

The invention discloses a plasma jet-stream protective cover, which comprises a jet-stream core body and a jet-stream core body center axial direction through hole. One end face of the core body is provided with two groups of air intakes. A core body perisporium is correspondingly provided with two groups of air outtakes. The two groups of air outtakes are communicated with the corresponding air intakes so as to form an inner layer of protection air and an outer layer of protection air. An inner ring is connected to the jet-stream core body and is cooperated with one group of air outtakes on the front end of the core body perisporium. An outer ring is connected to the jet-stream core body and is cooperated with the other group of air outtakes of the core body perisporium. The jet-stream core body, the inner ring and the outer ring are together assembled into a cover structure. One end of the cover structure is used for air suction, and the other end forms two layers of protection air rings and is extended forward so as to enable the plasma jet-stream to be effectively separated from the atmosphere. One protective device is installed on one spray gun of an atmosphere plasma spray coating device, completely-molten or half-molten powder is protected inside the protective air along with the flame through the protection of the air so as to be separated from the atmosphere, the oxidization and nitrogenization of the powder in a high temperature can be reduced, and the quality of a target coating can be improved.

An optical magnetic recording medium. Characterized in the it comprises a substrate and, formed thereon in the following order, a soft magnetic film, a protective film, a resin layer having a servopattern formed thereon, a reflective film, an under dielectric film, a recording layer, a upper dielectric film and a cover layer. An optical magnetic recording medium, characterized in that it comprises a substrate and, formed thereon in the following order, a soft magnetic film, a protective film, a resin layer having a servopattern formed thereon, a reflective film, an under dielectric film, a recording layer, a upper dielectric dielectric film and a cover layer.

The invention provides a method for preparing boron-containing micro-alloy steel by using boron-containing pig iron as a boron charging agent, and belongs to the technical field of metallurgy. The method comprises the following steps: (1) preparing industrial pure iron, the boron-containing pig iron, ferro-titanium, manganese metal, iron-carbon alloy, ferro-silicon alloy and pure aluminium serving as raw materials according to predetermined components; (2) adding the prepared industrial pure iron and iron-carbon alloy to an induction furnace, melting the materials, sequentially adding the ferro-silicon alloy, the pure aluminium, the ferro-titanium, the manganese metal and the boron-containing pig iron, melting under a vacuum condition, and feeding argon for refinement; (3) after ending refinement, casting into cast ingots, then heating to 1200+ / -10 DEG C, and preserving heat for 0.5-2 hours; (4) rolling the cast ingots subjected to heat preservation by two stages; and carrying out final rolling, thus obtaining roll steel; and (5) continuously cooling the roll steel to 530-560 DEG C at the rate of 40-50 DEG C / s, and then carrying out air cooling to room temperature, thus obtaining the boron-containing micro-alloy steel. The method has the advantages that the composite cost is low, the industrialization is easy to realize, and the prepared product has excellent performances and good application prospect.

An optical magnetic recording medium. Characterized in the it comprises a substrate and, formed thereon in the following order, a soft magnetic film, a protective film, a resin layer having a servopattern formed thereon, a reflective film, an under dielectric film, a recording layer, a upper dielectric film and a cover layer. An optical magnetic recording medium, characterized in that it comprises a substrate and, formed thereon in the following order, a soft magnetic film, a protective film, a resin layer having a servopattern formed thereon, a reflective film, an under dielectric film, a recording layer, a upper dielectric dielectric film and a cover layer.

The invention discloses a titanium / steel dissimilar metal plasma shunt melting electrode arc brazing device and method based on pulse coordination control. The device comprises a main welding power supply 1, a shunt power supply 8, a pulse coordination controller 13, a back-pull protection gas cover 2, a plasma shunt melting electrode welding gun 21, a wire feed mechanism 6, a current sensor 19 and the like. In the welding process, a pulse coordination control method is adopted, that is, when the main circuit current is a basic value, the shunt current is also a basic value, and the arc coupling stability in the welding process can be ensured; when the main circuit current is a peak value, the shunt current is also a peak value, the low workpiece heat input during welding can be ensured, and the stable and reliable welding process is realized. Brazed seams are protection by the back-pull protection gas cover in the welding process, and the problems of oxidizing, nitriding and the likein the high-temperature cooling process of the brazed seams are avoided.