Near-infrared single photon detector

Abstract

The invention discloses a near infrared single-photon detector which comprises a substrate, a cushioning layer, an N-type ohmic contact layer, a superlattice multiplication layer, an electric filed control layer, a bandgap gradient layer and a light absorbing layer. Through the introduction of the superlattice structure and an absorbing layer gradient structure, the performance of the detector is improved; particularly, the detection frequency and noise influence of the detector are greatly improved, so that the gain bandwidth product of the detector can be effectively improved. In addition, the detector is provided with simple process and high repeatability.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a near-infrared single-photon detector for detecting near-infrared weak light signals. Background technique [0002] Single-photon detection technology is used in high-resolution spectral measurement, non-destructive material analysis, high-speed phenomenon detection, precision analysis, atmospheric pollution measurement, bioluminescence, radiation detection, high-energy physics, astrophotometry, optical time domain reflection, quantum key Distribution systems and other fields have a wide range of applications. Especially in recent years, the research on quantum communication technology and quantum cryptography has attracted the attention of various countries, and the research on single photon detectors in the infrared communication band is particularly urgent. [0003] Existing single photon detectors use holes to cause avalanche multiplication to amplify the optical signal...

AI Technical Summary

Problems solved by technology

[0003] Existing single photon detectors use holes to cause avalanche multiplication to amplify the optical signal. The material of the multiplication layer is InP. However, the hole mobility is low and the detection frequency band of the detector is suppressed. In addition, , the ionization rate of holes and electrons in the InP material is closer, which makes the detector have a larger noise factor; the increase in the thickness of InGaAs is used to improve the quantum efficiency of the detector, which also limits the detection frequency

In addition, due to the high requirements of the manufacturing process, the infrared single photon detectors currently on the market have disadvantages such as low detection efficiency, high noise, complex process, and low repeatability.

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