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Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device

A control method and laser technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve problems such as prolonged assembly time, difficulty in reducing size, and influence of adjustable laser parameter changes

Active Publication Date: 2009-07-01
SUMITOMO ELECTRIC DEVICE INNOVATIONS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, there is a problem that tunable lasers are susceptible to parameter changes
In this case, cost may increase due to increased number of parts and longer assembly time, and size reduction may be difficult

Method used

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  • Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device
  • Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device
  • Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device

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Effect test

no. 1 approach

[0045] figure 2 A schematic diagram illustrating the wavelength tunable laser 10 and the laser device 100 having the wavelength tunable laser 10 according to the first embodiment is illustrated. Such as figure 2 As shown, the laser device 100 has a wavelength tunable laser 10 , a temperature control device 20 , an output detector 30 , a wavelength detector 40 and a controller 50 . The wavelength tunable laser 10 is located on the temperature control device 20 . Each component will be described in detail below.

[0046] The wavelength tunable laser 10 has the following structure, in which a chirped sampled grating distributed reflector (CSG-DBR) region 11, a sampled grating distributed feedback laser (SG-DFB) region 12 and a semiconductor optical amplifier (SOA) area 13.

[0047] The CSG-DBR region 11 has an optical waveguide having a plurality of segments in which a first region having a diffraction grating and a second region connected to the first region and serving as...

no. 2 approach

[0142] Figure 16 A schematic diagram of a laser device 100a according to the second embodiment is illustrated. The laser device 100 a differs from the laser device 100 in that a wavelength tunable laser 10 a is provided instead of the wavelength tunable laser 10 .

[0143] Such as Figure 16 As shown, the wavelength tunable laser 10a has the following structure, in which the SG-DBR (sampling grating distributed Bragg reflector) region 21, PS (phase shift) region 22, gain region 23, SG- DBR zone 24 and SOA zone 13.

[0144] The SG-DBR regions 21 and 24 have an optical waveguide having a plurality of segments in which a first region having a diffraction grating and a second region connected to the first region and serving as a spacer are provided. The optical waveguide is made of a semiconductor crystal having an absorption edge wavelength on the shorter wavelength side than the laser oscillation wavelength. Within the SG-DBR regions 21 and 24, each second region has the sa...

no. 3 approach

[0149] Figure 17 A schematic diagram of a laser device 100b according to the third embodiment is illustrated. Such as Figure 17 As shown, the laser device 100 b has a gain element 10 b consisting of a gain region 61 and a PS region 62 . A fixed etalon 67 and a liquid crystal mirror 66 are sequentially provided on the side of the PS region 62 of the gain element 10b. The fixed etalon 67 is an optical etalon with periodic transparent wavelength peaks. The liquid crystal mirror 66 has a structure in which a liquid crystal etalon is integrated with a mirror to form a resonator between the mirror and the end face of the gain region 61 . Here, the liquid crystal etalon has an optical etalon structure in which a liquid crystal region is sealed, and the refractive index of the liquid crystal can be controlled using a voltage. The liquid crystal mirror 66 according to this embodiment has a liquid crystal etalon whose wavelength peak is not used to fix the wavelength peak of the e...

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Abstract

A testing method of a wavelength-tunable laser having a resonator including wavelength selection portions having wavelength property different from each other includes a first step of controlling the wavelength-tunable laser so as to oscillate at a given wavelength according to an initial setting value, a second step of tuning the wavelength property of the wavelength selection portions and detecting discontinuity point of gain-condition-changing of the wavelength-tunable laser, and a third step of obtaining a stable operating point of the wavelength selection portion according to a limiting point of an oscillation condition at the given wavelength, the limiting point being a point when the discontinuity point is detected.

Description

technical field [0001] The invention relates to a measurement method of a wavelength-tunable laser, a control method of a wavelength-tunable laser and a laser device. Background technique [0002] This application claims priority from Japanese Patent Application No. 2007-339196 filed on December 28, 2007 and Japanese Patent Application No. 2008-308984 filed on December 3, 2008, the entire contents of which are hereby incorporated by reference. [0003] Tunable lasers capable of selecting a desired oscillation wavelength are known. For example, a tunable laser has two or more wavelength selective sections, such as reflectors with a periodic reflection spectrum or gain regions with a periodic gain spectrum. A tunable laser selects a desired wavelength while controlling the relative relationship between periodic peaks. [0004] Detect an oscillation state such as an oscillation wavelength or a spectrum by using an instrument such as a wavelength meter or a spectrum analyzer; ...

Claims

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Application Information

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IPC IPC(8): H01S3/10H01S3/13H01S5/0625H01S5/0687
Inventor 石川务町田豊稔田中宏和
Owner SUMITOMO ELECTRIC DEVICE INNOVATIONS
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