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EPIR effect resistor type non-volatile random memory material, preparation and use thereof

A non-volatile random and resistive random technology, which is applied in the field of EPIR effect resistive random storage materials and its preparation, random storage materials and preparation, can solve the problems of high power consumption and high driving voltage of RRAM random access memory, and achieve superior Effects of stable characteristics, low driving voltage, and excellent anti-fatigue characteristics

Inactive Publication Date: 2010-12-22
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the driving voltage for the change between its high and low resistance states is relatively high, requiring a voltage of more than 10V, which will increase the power consumption of RRAM random access memory.

Method used

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  • EPIR effect resistor type non-volatile random memory material, preparation and use thereof
  • EPIR effect resistor type non-volatile random memory material, preparation and use thereof
  • EPIR effect resistor type non-volatile random memory material, preparation and use thereof

Examples

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Embodiment 1

[0034] La 0.2 Y 0.2 Ca 0.6 MnO 3 Preparation: Separately La 2 o 3 , Y 2 o 3 , CaCO 3 Drying was performed at 900°C, 900°C, and 400°C. Weigh the dried La according to the stoichiometric ratio 2 o 3 (99.99%), Y 2 o 3 (99.99%) CaCO 3 (99%) and MnO 2 (97.5%), add a small amount of absolute ethanol and fully mix and grind evenly, pre-fire at 900°C, take it out after cooling to room temperature naturally, grind it again fully, and press it into a disc with a thickness of about 2mm and a diameter of 13mm under a pressure of 12MPa. It is then sintered at 1350°C for 12 hours and then cooled with the furnace. After taking it out, grind it again thoroughly, press it into a cuboid with a length, width and height of about 7×4×3 (mm) under a pressure of 4Mpa, and then sinter at 1400°C for 12 hours, and then take it out with furnace cooling.

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Abstract

The invention provides the formulation of an EPIR effect resistance-type random storage material with lower drive voltage, the preparation method and the purpose thereof. The EPIR effect resistance-type random storage material is a manganese oxide with single-phase perovskite structure prepared by solid-phase reaction method, with the formula of Nd1-xSrxMnO3, called as NSMO system, where x is larger than 0 and smaller than 1; La0.4-yYyCa0.6MnO3, called as LYCOM system, where y is larger than 0 and smaller than 0.4; La0.4-zYbzCa0.6MnO3, called as LYbCMO system, where z is larger than 0 and smaller than 0.4; and La0.4-gScgCa0.6MnO3, called as LSCMO system, where g is larger than 0 and smaller than 0.4. Tests show that the EPIR effect resistance-type random storage material has excellent performance and low drive voltage (1 to 5 V), and is an excellent candidate material for developing nonvolatile storage materials.

Description

technical field [0001] The invention relates to a random storage material and a preparation method thereof, in particular to an EPIR effect resistive random storage material, a preparation method and an application thereof. It belongs to the field of new information electronic materials. Background technique [0002] Non-volatile memory (NVM) refers to a storage device whose stored information will not be lost after the power is cut off. Non-volatile memory is widely used in modern industrial fields such as computers, automobiles, household appliances, communications, networks and automatic control. Since the 1950s, non-volatile memory such as mask read-only memory (ROM), electrically erasable read-only memory (EPROM), electrically erasable read-only memory (EEPROM) and flash memory (FLASH) have been invented successively. volatile memory. In recent years, with the improvement of computer computing performance and the trend of miniaturization, the research of new non-vola...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C16/02G11C11/56C04B35/01C04B35/622
Inventor 杨昌平陈顺生邓恒王瑞龙王浩杨道虹
Owner HUBEI UNIV