C genus reverser employing body potential modulator

A body potential and modulator technology, applied in the amplitude modulation of semiconductor devices with at least 3 electrodes, components of electric pulse circuits, electrical components, etc., can solve problems such as adverse effects of MOS devices, and achieve improved power supply rejection ratio , reduced sensitivity, and improved power consumption

Inactive Publication Date: 2009-08-19
ZHEJIANG UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide a body potential modulator to overcome the disadvantages of the prior art that the factors such as process deviation and temperature have adverse effects on MOS devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • C genus reverser employing body potential modulator
  • C genus reverser employing body potential modulator
  • C genus reverser employing body potential modulator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: The structural block diagram of the body potential modulator proposed by the present invention is as attached image 3 As shown, it consists of four parts: a target MOS device 30 , an inductive MOS device 31 , an inductive current-to-voltage circuit 32 and a feedback circuit 33 . The width-to-length ratio of the sensing MOS device 31 and the target MOS device 30 is fixed, the layout matching is symmetrical, and the gate-source bias voltage is the same. The induction current output terminal of the induction MOS device 31 is sequentially connected to the induction current-to-voltage circuit 32, the feedback circuit 33, and the body terminal of the target MOS device 30 to realize an "induction feedback" loop, and finally greatly reduce the target MOS device 30 through body potential modulation. Sensitivity to process variation and temperature.

[0037] The basic basis for body potential modulation is that there is a relationship between the threshold voltage...

Embodiment 2

[0046] Embodiment two: the class C inverter proposed by the present invention is as attached Figure 7 As shown, it is composed of a class C inverter 70 in the prior art and a PMOS body potential modulator 71 and an NMOS body potential modulator 72 in the present invention. Wherein, the class-C inverter 70 of the prior art can adopt a simple class-C inverter (see attached figure 1 ), you can also use a cascode type C class inverter (see attached figure 2 ), the body potential modulators 71 and 72 are two circuit implementation forms of the body potential modulator described in the present invention, and are innovative modules introduced in the class-C inverter.

[0047] attached Figure 7 Among them, the class C inverter 70 in the prior art adopts a cascode type C inverter, which has a simple structure and extremely low power consumption, and is used to realize the operation amplification function. It consists of PMOS tubes M1, M3 and NMOS tubes M2, M4, where M1 and M2 are...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a class-C reverser which adopts a bulk potential modulator. In the bulk potential modulator, a target MOS device (30), an induction MOS device (31), an induction current-to-voltage circuit (32) and a feedback circuit (33) form an 'induction feedback' loop circuit together. The novel class-C reverser comprises a class-C reverser module of the prior art as well as a PMOS bulk potential modulator and an NMOS bulk potential modulator in the invention, wherein, both the PMOS bulk potential modulator and the NMOS bulk potential modulator are circuit realization forms of the bulk potential modulator provided by the invention. The bulk potential modulator can realize real-time modulation to parameters of the target MOS device, thus greatly weakening the influence of technological deviation. As the parameters of the MOS device are especially sensitive to the technological deviation in a weak inversion region, the bulk potential modulator is generally applied to MOS devices at key parts of a subthreshold circuit.

Description

technical field [0001] The invention relates to a body potential modulator and a class C inverter including the modulator, belonging to the technical field of integrated circuits. Background technique [0002] In the traditional analog circuit design, the operational amplifier is often an indispensable circuit module, and it is widely used in sample-and-hold, algebraic operations, common-mode feedback, and buffer circuits. At the same time, the operational amplifier is also the main power consumption module in the analog circuit. Nowadays, low voltage and low power consumption are the mainstream trend in the development of analog circuit design, so how to realize an operational amplifier that meets the specification requirements in a low voltage and low power consumption environment has become the focus of analog circuit design. However, the reduction of power supply voltage means the reduction of dynamic range, the reduction of input common mode range, the increase of capa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/01H03K3/356
CPCH03C1/36
Inventor 罗豪韩雁黄小伟蔡坤明张昊韩晓霞
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap